RB411VA-50TR ROHM

Schottky Barrier Diode RB411VA-50 Applications Dimensions (Unit : mm) Land size figure (Unit : mm) General rectification 0.170.1 1.1 0.05 1.30.05 Features 1) Small mold type. (TUMD2) 2) High reliability. TUMD2 Construction Silicon epitaxial planar Structure 0.80.05 0.60.2 ROHM : TUMD2 0.1 dot (year week factory) + day Taping specifications (Unit : mm) 1.550.1 0.250.05 4.00.1 2.00.05 0 4.00.1 1.00.2 1.430.05 0 0.90.08 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit V Reverse voltage (repetitive peak) 50 V RM Reverse voltage (DC) V 20 V R Average rectified forward current 0.5 Io A Forward current surge peak (60Hz1cyc) I 3 A FSM Junction temperature 125 Tj C Storage temperature Tstg 40 to 125 C Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions V 1 - - 0.50 V I =500mA F F Forawrd voltage V 2 - - 0.30 V I =10mA F F I Reverse current -- 30 AV =10V R R Capacitance between terminals Ct - 20 - pF V =10V , f=1MHz R www.rohm.com 1/3 2012.03 - Rev.C 2012 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs 1.90.1 2.50.2 3.50.05 1.750.1 2.75 8.00.2 2.80.05 2.0 0.8 0.5DataSheet RB411VA-50 1000 Ta=125 10000 100 Ta=25 f=1MHz Ta=75 Ta=75 1000 100 Ta=125 100 10 Ta=-25 Ta=25 10 10 1 Ta=-25 1 1 0.1 0.1 0 102030 0 100 200 300 400 500 0 10203040 50 REVERSE VOLTAGE:VR(V) REVERSE VOLTAGEVR(V) FORWARD VOLTAGEVF(mV) VR-Ct CHARACTERISTICS VR-IR CHARACTERISTICS VF-IF CHARACTERISTICS 460 240 100 Ta=25 Ta=25 Ta=25 90 IF=500mA IF=10mA VR=10V 450 230 80 n=30pcs n=30pcs n=30pcs 70 440 220 60 50 430 210 40 30 AVE:405.6mV :3.0258mV 420 200 20 AVE:5.76uA AVE:213.2mV AVE:432.1mV 10 410 190 0 VF DISPERSION MAP VF DISPERSION MAP IR DISPERSION MAP 30 25 20 Ta=25 Ta=25 24 IF=0.5A f=1MHz 1cyc 25 Ifsm 23 IR=1A VR=10V 15 Irr=0.25*IR n=10pcs 22 8.3ms 20 n=10pcs 21 20 10 15 19 10 18 5 17 AVE:19.41pF 5 AVE:6.30A 16 AVE:6.20ns 0 15 0 Ct DISPERSION MAP IFSM DISRESION MAP trr DISPERSION MAP 10 15 1000 Rth(j-a) Ifsm Ifsm t 8.3ms 8.3ms 10 100 1cyc Rth(j-c) 5 Mounted on epoxy board IM=1mA IF=100mA 5 10 time 1ms 300us 0 0 1 0.1 1 10 100 1000 1 10 100 0.001 0.1 10 1000 NUMBER OF CYCLES TIME:t(ms) TIME:t(s) IFSM-CYCLE CHARACTERISTICS IFSM-t CHARACTERISTICS Rth-t CHARACTERISTICS www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2/3 2011.03 - Rev.C Not Recommended for New Designs FORWARD VOLTAGE:VF(mV) CAPACITANCE BETWEEN FORWARD CURRENT:IF(mA) PEAK SURGE FORWARD CURRENT:IFSM(A) TERMINALS:Ct(pF) REVERSE CURRENT:IR(uA) PEAK SURGE FORWARD VOLTAGE:VF(mV) PEAK SURGE FORWARD CURRENT:IFSM(A) FORWARD CURRENT:IFSM(A) TRANSIENT CAPACITANCE BETWEEN REVERSE RECOVERY TIME:trr(ns) REVERSE CURRENT:IR(uA) THAERMAL IMPEDANCE:Rth (/W) TERMINALS:Ct(pF)