RB225T-40 ROHM

Data Sheet Schottky Barrier Diode RB225T-40 Applications Dimensions(Unit : mm) Structure Switching power supply 4.50.3 0.1 2.80.2 10.00.3 0.1 0.1 (1) (2) (3) Features 1)Cathode common type.(TO-220) 2)Low IR 3)High reliability Construction 1.2 Silicon epitaxial planer 1.3 0.8 (1) (2) (3) 0.70.1 2.60.5 0.05 ROHM : O220FN Manufacture Date Absolute maximum ratings(Ta=25C) Parameter Limits Symbol Unit Reverse voltage (repetitive) V 40 V RM Reverse voltage (DC) V 40 V R Average rectified forward current(*1) 30 Io A Forward current surge peak 60Hz1cyc(*1) 100 I A FSM Junction temperature 150 Tj C Storage temperature Tstg 40 to 150 C (*1)Tc=105Cmax Per chip:Io/2 Electrical characteristics(Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage V - - 0.63 V I =15A F F Reverse current I - - 500 A V =40V R R Thermal impedance jc - - (1.75) junction to case C/W ( ) : tentative www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.04 - Rev.A 1/3 Not Recommended for New Designs 5.00.2 8.00.2 12.00.2 13.5MIN 13.5Min. 15.00.4 0.2 8.0RB225T-40 Data Sheet Electrical characteristic curves 1000000 10000 100 Ta=150 C Ta=125 C f=1MHz Ta=150 C 100000 1000 Ta=125 C 10 10000 Ta=75 C Ta=75 C 1000 Ta=25 C 100 1 Ta=25 C 100 Ta=-25 C Ta=-25 C 10 10 0.1 1 1 0.01 0.1 0 5 10 15 20 25 30 0 100 200 300 400 500 600 0 5 10 15 20 25 30 35 40 FORWARD VOLTAGE:V (mV) REVERSE VOLTAGE:V (V) F REVERSE VOLTAGE:V (V) R R V -Ct CHARACTERISTICS V -I CHARACTERISTICS V -I CHARACTERISTICS R F F R R 2550 1000 560 Ta=25 C Ta=25C Ta=25 2540 900 I =15A V =40V F R f=1MHz 2530 800 n=30pcs 550 n=30pcs V =0V R n=10pcs 2520 700 600 2510 540 500 2500 2490 AVE:2515.6pF 400 530 2480 300 AVE:78.7uA 2470 200 520 2460 AVE:534.5mV 100 0 2450 510 V DISPERSION MAP F I DISPERSION MAP Ct DISPERSION MAP R 1000 300 50 Ta=25 C 45 Ifsm Ifsm 1cyc 250 I =0.5A F 40 I =1A 8.3ms 8.3ms R 8.3ms 35 AVE:27.4ns 200 Irr=0.25*I 1cyc R n=10pcs 30 100 150 25 20 100 15 10 50 AVE:176.0A 5 10 0 0 1 10 100 I DISPERSION MAP NUMBER OF CYCLES FSM trr DISPERSION MAP I -CYCLE CHARACTERISTICS FSM 100 1000 50 IM=100mA I =10A F D=1/2 Ifsm 40 t 1ms time 10 Rth(j-a) 300us 30 Mounted on epoxy board 100 DC Sin( =180) 20 Rth(j-c) 1 10 0 10 0.1 0 1020 3040 50 110 100 0.001 0.01 0.1 1 10 100 1000 AVERAGE RECTIFIED TIME:t(ms) TIME:t(s) I -t CHARACTERISTICS FORWARD CURRENT:Io(A) FSM Rth-t CHARACTERISTICS Io-Pf CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.A Not Recommended for New Designs PEAK SURGE PEAK SURGE FORWARD CURRENT:I (A) FSM FORWARD VOLTAGE:V (mV) FORWARD CURRENT:I (A) FORWARD CURRENT:I (A) F F FSM REVERSE CURRENT:I (uA) R TRANSIENT REVERSE CURRENT:I (uA) REVERSE RECOVERY TIME:trr(ns) R THAERMAL IMPEDANCE:Rth (/W) CAPACITANCE BETWEEN PEAK SURGE CAPACITANCE BETWEEN FORWARD POWER TERMINALS:Ct(pF) FORWARD CURRENT:I (A) TERMINALS:Ct(pF) FSM DISSIPATION:Pf(W)