STPSC12065 Datasheet 650 V, 12 A power Schottky silicon carbide diode Features K A No or negligible reverse recovery K K Switching behavior independent of temperature Dedicated to PFC applications A A K A High forward surge capability NC NC Operating T from -40 C to 175 C DPAK DPAK HV j K DPAK HV creepage distance (anode to cathode) = 5.38 mm min. ECOPACK2 compliant Power efficient product A K TO-220AC Applications DC/DC converter High frequency inverter Snubber Boost PFC function Description The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal Product label capacitive turn-off behavior is independent of temperature. Housed in DPAK HV, this diode is perfectly suited for a usage in PFC applications, in charging station, DC/DC, easing the compliance to IEC-60664-1. Product status link STPSC12065 Product summary Symbol Value I 12 A F(AV) V 650 V RRM T (max.) 175 C j V (typ.) 1.30 V F DS11623 - Rev 3 - March 2021 www.st.com For further information contact your local STMicroelectronics sales office.STPSC12065 Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 650 V RRM I Forward rms current 22 A F(RMS) (1) I Average forward current T = 145 C, DC 12 A F(AV) C I T =145 C, T = 175 C, = 0.1 Repetitive peak forward current 53 A FRM c j t = 10 ms sinusoidal, T = 25 C 50 p c I t = 10 ms sinusoidal, T = 125 C Surge non repetitive forward current 40 A FSM p c t = 10 s square, T = 25 C 220 p c T Storage temperature range -55 to +175 C stg T Operating junction temperature -40 to +175 C j 1. Value based on R max. th(j-c) Table 2. Thermal resistance parameters Value Symbol Parameter Unit Typ. Max. R Junction to case 0.85 1.25 C/W th(j-c) For more information, please refer to the following application note: AN5088: Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 15 150 j V = V R RRM (1) I Reverse leakage current T = 150 C - 200 1000 A j R T = 25 C 600 V 8 50 j T = 25 C - 1.30 1.45 j (2) V T = 150 C I = 12 A Forward voltage drop - 1.45 1.65 V F j F T = 175 C - 1.50 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 500 s, < 2% p To evaluate the conduction losses use the following equation: P = 1.02 x I + 0.065 x I F(AV) F (RMS) For more information, please refer to the following application notes related to the power losses : AN604: Calculation of conduction losses in a power rectifier AN4021: Calculation of reverse losses on a power diode DS11623 - Rev 3 page 2/14