STPSC16H065A Datasheet 650 V power Schottky silicon carbide rectifier Features NC K A No or negligible reverse recovery Temperature independent switching behavior High forward surge capability Operating T from -40 C to 175 C j Power efficient product A ECOPACK 2 compliant TO-247 K NC Applications DC/DC converter High frequency inverter Boost PFC function Description The STPSC16H065A SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, this ST SiC diode, packaged in TO-247, will boost the performance in hard switching conditions. Its high forward Product status link surge capability ensures a good robustness during transient phases. STPSC16H065A Product summary I 16 A F(AV) V 650 V RRM T (max.) 175 C j V (typ.) 1.56 V F Product label DS12768 - Rev 1 - October 2018 www.st.com For further information contact your local STMicroelectronics sales office.STPSC16H065A Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V T = -40 C to +175 C Repetitive peak reverse voltage 650 V RRM j I Forward rms current 22 A F(RMS) (1) I T = 115 C , DC current Average forward current 16 A F(AV) c t = 10 ms sinusoidal, T = 25 C 120 p c I t = 10 ms sinusoidal, T = 125 C Surge non repetitive forward current 105 A FSM p c t = 10 s square, T = 25 C 800 p c (1) I Repetitive peak forward current T = 115 C , T = 175 C, = 0.1 66 A FRM c j T Storage temperature range -55 to +175 C stg T Operating junction temperature -40 to +175 C j 1. Value based on R max. th(j-c) Table 2. Thermal resistance parameters Value Symbol Parameter Unit Typ. Max. R Junction to case 0.95 1.5 C/W th(j-c) For more information, please refer to the following application note: AN5088: Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 12 140 j (1) V = V I Reverse leakage current A R R RRM T = 150 C - 120 560 j T = 25 C - 1.56 1.75 j (2) I = 16 A V Forward voltage drop V F F T = 150 C - 1.98 2.50 j 1. Pulse test: t = 10 ms, < 2% p 2. Pulse test: t = 500 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 1.35 x I + 0.07 x I F(AV) F (RMS) For more information, please refer to the following application notes related to the power losses: AN604: Calculation of conduction losses in a power rectifier AN4021: Calculation of reverse losses on a power diode DS12768 - Rev 1 page 2/9