33 3 V30K45 www.vishay.com Vishay General Semiconductor High Current Density Surface-Mount (TMBS ) Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.30 V at I = 5 A F F FEATURES Available Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation 8 Meets MSL level 1, per J-STD-020, 7 LF maximum peak of 260 C 6 5 AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 FlatPAK 5 x 6 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 1, 2, 3, 4 5, 6, 7, 8 TYPICAL APPLICATIONS DESIGN SUPPORT TOOLS AVAILABLE For use in low voltage high frequency DC/DC converters, freewheeling diodes, and polarity protection applications. 3D Models MECHANICAL DATA Case: FlatPAK 5 x 6 PRIMARY CHARACTERISTICS Molding compound meets UL 94 V-0 flammability rating I 30 A F(AV) Base P/N-M3 - halogen-free, RoHS-compliant V 45 V Base P/NHM3 - halogen-free, RoHS-compliant, and RRM AEC-Q101 qualified I 240 A FSM V at I = 30 A (T = 125 C) 0.46 V Terminals: matte tin plated leads, solderable per F F A J-STD-002 and JESD 22-B102 T max. 150 C J M3 and HM3 suffix meets JESD 201 class 2 whisker test Package FlatPAK 5 x 6 Circuit configuration Single MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V30K45 UNIT Device marking code V3045 Maximum repetitive peak reverse voltage V 45 V RRM (1) I 30 F(AV) Maximum DC forward current (2) I 5 F(AV) A Peak forward surge current 8.3 ms single half sine-wave I 240 FSM superimposed on rated load (3) Operating junction temperature range T -40 to +150 J C Storage temperature range T -55 to +150 STG Notes (1) With infinite heatsink (2) Free air, mounted on recommended pad area (3) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA Revision: 08-Jul-2019 Document Number: 87416 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 1 2 3 4 DD D V30K45 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 5 A 0.42 - F I = 15 A T = 25 C 0.48 - F A I = 30 A 0.54 0.63 F (1) Instantaneous forward voltage V V F I = 5.0 A 0.30 - F I = 15 A T = 125 C 0.38 - F A I = 30 A 0.46 0.54 F T = 25 C -2 A (2) Reverse current V = 45 V I mA R R T = 125 C 15 55 A Typical junction capacitance 4.0 V, 1 MHz C 4000 - pF J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: pulse width 5 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL TYP.MAX.UNIT (1)(2) R 75 - JA Typical thermal resistance C/W (3) R 2.5 3.5 JM Notes (1) The heat generated must be less than thermal conductivity from junction to ambient: dP /dT < 1/R D J JA (2) Free air, mounted on recommended copper pad area thermal resistance R - junction-to-ambient JA (3) Mounted on infinite heatsink thermal resistance R - junction-to-mount JM ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE V30K45-M3/H 0.10 H 1500 7 diameter plastic tape and reel V30K45-M3/I 0.10 I 6000 13 diameter plastic tape and reel (1) V30K45HM3/H 0.10 H 1500 7 diameter plastic tape and reel (1) V30K45HM3/I 0.10 I 6000 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 08-Jul-2019 Document Number: 87416 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000