333 3 V35DM120 www.vishay.com Vishay General Semiconductor Dual High-Voltage TMBS (Trench MOS Barrier Schottky) Rectifier Ultra Low V = 0.43 V at I = 5 A F F FEATURES eSMP Series Available Trench MOS Schottky technology generation 2 SMPD (TO-263AC) Very low profile - typical height of 1.7 mm Ideal for automated placement K Low forward voltage drop, low power losses High efficiency operation 1 Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C 2 Top View Bottom View AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 Material categorization: for definitions of compliance Anode 1 K please see www.vishay.com/doc 99912 Anode 2 Cathode TYPICAL APPLICATIONS LINKS TO ADDITIONAL RESOURCES For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection in commercial, industrial, and 3D Models automotive application. MECHANICAL DATA PRIMARY CHARACTERISTICS Case: SMPD (TO-263AC) I 35 A F(AV) Molding compound meets UL 94 V-0 flammability rating V 120 V RRM Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and I 320 A FSM AEC-Q101 qualified V at I = 35 A (T = 125 C) 0.73 V F F A Terminals: matte tin plated leads, solderable per T max. 175 C J J-STD-002 and JESD 22-B102 Package SMPD (TO-263AC) M3 and HM3 suffix meets JESD 201 class 2 whisker test Circuit configuration Single Polarity: as marked MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V35DM120 UNIT Maximum repetitive peak reverse voltage V 120 V RRM (1) I 35 F(AV) Maximum average forward rectified current (fig. 1) A (2) I 6.3 F(AV) Peak forward surge current 8.3 ms single half sine-wave I 320 A FSM superimposed on rated load Operating junction and storage temperature range T , T -40 to +175 C J STG Notes (1) With infinite heatsink (2) With recommended pad size, 2 oz FR4 PCB Revision: 01-Apr-2020 Document Number: 87603 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D V35DM120 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 5 A 0.53 - F I = 17.5 A T = 25 C 0.73 - F A I = 35 A 0.97 1.05 F (1) Instantaneous forward voltage per diode V V F I = 5 A 0.43 - F I = 17.5 A T = 125 C 0.61 - F A I = 35 A 0.73 0.81 F T = 25 C 0.01 - A V = 90 V R = 125 C 5 - T A (2) Reverse current at rated V per diode I mA R R T = 25 C - 1.2 A V = 120 V R T = 125 C 10 30 A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 5 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V35DM120UNIT R 1.1 JC Typical thermal resistance C/W (1)(2) R 48 JA Notes (1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R - junction-to-mount D J JA (2) Free air, without heatsink ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE V35DM120-M3/I 0.55 I 2000/reel 13 diameter plastic tape and reel (1) V35DM120HM3/I 0.55 I 2000/reel 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 01-Apr-2020 Document Number: 87603 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000