333 3 V30DL45 www.vishay.com Vishay General Semiconductor Low-Voltage TMBS (Trench MOS Barrier Schottky) Rectifier Ultra Low V = 0.28 V at I = 5 A F F FEATURES eSMP Series Available Trench MOS Schottky technology SMPD (TO-263AC) Very low profile - typical height of 1.7 mm Ideal for automated placement K Low forward voltage drop, low power losses High efficiency operation 1 Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C 2 Top View Bottom View AEC-Q101 qualified available - Automotive ordering code base P/NHM3 Material categorization: for definitions of compliance Anode 1 K please see www.vishay.com/doc 99912 Anode 2 Cathode TYPICAL APPLICATIONS ADDITIONAL RESOURCES For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. 3D Models MECHANICAL DATA PRIMARY CHARACTERISTICS Case: SMPD (TO-263AC) Molding compound meets UL 94 V-0 flammability rating I 30 A F(AV) Base P/N-M3 - halogen-free, RoHS-compliant, an d V 45 V RRM commercial grade I 240 A FSM Base P/NHM3 X - halogen-free, RoHS-compliant, and V at I = 30 A (T = 125 C) 0.51 V AEC-Q101 qualified F F A ( X denotes revision code e.g. A, B,.....) T max. 150 C J Terminals: matte tin plated leads, solderable per Package SMPD (TO-263AC) J-STD-002 and JESD 22-B102 Circuit configuration Single M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix meets JESD 201 class 2 whisker test Polarity: as marked MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V30DL45 UNIT Maximum repetitive peak reverse voltage V 45 V RRM (1) Maximum average forward rectified current (fig. 1) I 30 A F(AV) Peak forward surge current 10 ms single half sine-wave I 200 A FSM superimposed on rated load Operating junction and storage temperature range T , T -40 to +150 C J STG Note (1) With heatsink Revision: 22-Jan-2020 Document Number: 87788 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D V30DL45 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 5 A 0.39 - F I = 15 A T = 25 C 0.47 - F A I = 30 A 0.57 0.65 F (1) Instantaneous forward voltage V V F I = 5 A 0.28 - F I = 15 A T = 125 C 0.38 - F A I = 30 A 0.51 0.60 F T = 25 C -3000 A A (2) Reverse current V = 45 V I R R T = 125 C 27 70 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: pulse width 5 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V30DL45 UNIT R 1.1 JC Typical thermal resistance C/W (1)(2) R 45 JA Notes (1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA (2) Free air, without heatsink ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE V30DL45-M3/I 0.54 I 2000/reel 13 diameter plastic tape and reel (1) V30DL45HM3 A/I 0.54 I 2000/reel 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 35 22 D = 0.8 R = R = 1.1 C/W thJA thJC 20 D = 0.5 30 18 D = 0.3 16 25 D = 0.2 D = 1.0 14 20 12 D = 0.1 10 15 8 T R = 45 C/W thJA 6 10 4 5 D = t /T 2 t p p 0 0 0 4 8 12 16 20 24 28 32 36 0 25 50 75 100 125 150 Average Forward Current (A) Case Temperature (C) Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Revision: 22-Jan-2020 Document Number: 87788 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Rectified Current (A) Average Power Loss (W)