X-On Electronics has gained recognition as a prominent supplier of V30D100CHM3/I Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. V30D100CHM3/I Schottky Diodes & Rectifiers are a product manufactured by Vishay. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

V30D100CHM3/I Vishay

V30D100CHM3/I electronic component of Vishay
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Part No.V30D100CHM3/I
Manufacturer: Vishay
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 100V 30A SMPD(TO-263AC)
Datasheet: V30D100CHM3/I Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2000: USD 0.7633 ea
Line Total: USD 1526.6 
Availability - 0
MOQ: 2000  Multiples: 2000
Pack Size: 2000
Availability Price Quantity
0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 2000
Multiples : 2000
2000 : USD 0.7633

0
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 2000
Multiples : 2000
2000 : USD 0.8627

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Product Type
Factory Pack Quantity :
Subcategory
Tradename
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the V30D100CHM3/I from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the V30D100CHM3/I and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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33 3 V30D100C www.vishay.com Vishay General Semiconductor Dual High-Voltage TMBS (Trench MOS Barrier Schottky) Rectifier Ultra Low V = 0.46 V at I = 5.0 A F F FEATURES eSMP Series Available Trench MOS Schottky technology SMPD (TO-263AC) Very low profile - typical height of 1.7 mm Ideal for automated placement K Low forward voltage drop, low power losses High efficiency operation 1 Meets MSL level 1, per J-STD-020, 2 LF maximum peak of 260 C Top View Bottom View AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3 Material categorization: for definitions of compliance Anode 1 K please see www.vishay.com/doc 99912 Cathode Anode 2 DESIGN SUPPORT TOOLS AVAILABLE TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and 3D Models reverse battery protection in commercial, industrial, and automotive application. PRIMARY CHARACTERISTICS MECHANICAL DATA I 2 x 15 A F(AV) Case: SMPD (TO-263AC) V 100 V RRM Molding compound meets UL 94 V-0 flammability rating I 150 A FSM Base P/N-M3 - halogen-free, RoHS-compliant V at I = 15 A (T = 125 C) 0.64 V F F A Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified T max. 150 C J Terminals: matte tin plated leads, solderable per Package SMPD (TO-263AC) J-STD-002 and JESD 22-B102 Circuit configuration Common cathode M3 and HM3 suffix meet JESD 201 class 2 whisker test Polarity: as marked MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V30D100C UNIT Device marking code V30D100C Maximum repetitive peak reverse voltage V 100 V RRM per device 30 Maximum average forward rectified current (1) I A F(AV) (fig. 1) per diode 15 Peak forward surge current 8.3 ms single half sine-wave I 150 A FSM superimposed on rated load (2) -40 to +150 Operating junction temperature range T J C Storage temperature range T -55 to +150 STG Notes (1) Mounted on infinite heatsink (2) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA Revision: 15-Mar-2019 Document Number: 87551 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DD DV30D100C www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 5 A 0.52 - F I = 7.5 A T = 25 C 0.58 - F A I = 10 A 0.74 0.82 F (1) Instantaneous forward voltage per diode V V F I = 5 A 0.46 - F I = 7.5 A T = 125 C 0.53 - F A I = 10 A 0.64 0.72 F T = 25 C 0.01 - A V = 70 V R T = 125 C 5 - A (2) Reverse current per diode I mA R T = 25 C - 0.5 A V = 100 V R T = 125 C 10 25 A Typical junction capacitance 4.0 V, 1 MHz C 1250 - pF J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 5 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V30D100C UNIT (1) R 1.6 JC Typical thermal resistance per device C/W (2)(3) R 48 JA Notes (1) Mounted on infinite heatsink (2) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA (3) Free air, without heatsink ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE V30D100C-M3/I 0.55 I 2000/reel 13 diameter plastic tape and reel (1) V30D100CHM3/I 0.55 I 2000/reel 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 35 12.0 D = 0.8 R = 1.6 C/W thJC 30 D = 0.5 10.0 25 D = 0.3 8.0 fi D = 1.0 20 6.0 D = 0.2 15 4.0 T D = 0.1 10 R = 48 C/W thJA 2.0 5 D = t /T p t p 0 0.0 0 255075 100 125 150 0 2.5 5 7.5 10 12.5 15 17.5 Average Forward Current (A) Case Temperature (C) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Average Power Loss Characteristics Revision: 15-Mar-2019 Document Number: 87551 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Rectied Current (A) Average Power Loss (W)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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