VS-48CTQ060-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 20 A FEATURES Base 2 common Low forward voltage drop cathode High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long Anode 2 Anode term reliability 13Common 150 C T operation 3L TO-220AB cathode J High frequency operation Designed and qualified according to JEDEC -JESD 47 PRIMARY CHARACTERISTICS Material categorization: for definitions of compliance I 2 x 20 A F(AV) please see www.vishay.com/doc 99912 V 60 V R V at I 0.58 V F F DESCRIPTION I max. 89 mA at 125 C RM This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier T max. 150 C J technology allows for reliable operation up to 150 C E 13 mJ AS junction temperature. Typical applications are in switching Package 3L TO-220AB power supplies, converters, freewheeling diodes, and reverse battery protection. Circuit configuration Common cathode MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUESUNITS I Rectangular waveform 40 A F(AV) V 60 V RRM I t = 5 s sine 1000 A FSM p V 20 A , T = 125 C (per leg) 0.58 V F pk J T Range -55 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-48CTQ060-M3 UNITS Maximum DC reverse voltage V R 60 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS per leg 20 Maximum average forward I 50 % duty cycle at T = 111 C, rectangular waveform F(AV) C current, see fig. 5 per device 40 A Following any rated 5 s sine or 3 s rect. pulse 1000 Maximum peak one cycle non-repetitive I load condition and with FSM surge current per leg, see fig. 7 10 ms sine or 6 ms rect. pulse 260 rated V applied RRM Non-repetitive avalanche energy per leg E T = 25 C, I = 1.50 A, L = 11.5 mH 13 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 1.50 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 14-Aug-17 Document Number: 96253 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-48CTQ060-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 20 A 0.61 T = 25 C J 40 A 0.83 Maximum forward voltage drop per leg (1) V V FM See fig. 1 20 A 0.58 T = 125 C J 40 A 0.75 T = 25 C 2 Maximum reverse leakage current per leg J (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 89 J Threshold voltage V 0.37 V F(TO) T = T maximum J J Forward slope resistance r 8.26 m t Maximum junction capacitance per leg C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 1220 pF T R DC Typical series inductance per leg L Measured lead to lead 5 mm from package body 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -55 to +150 C J Stg temperature range Maximum thermal resistance, 2.0 junction to case per leg R DC operation thJC Maximum thermal resistance, 1.0 C/W junction to case per package Typical thermal resistance, R Mounting surface, smooth, and greased 0.50 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) Marking device Case style 3L TO-220AB 48CTQ060 Revision: 14-Aug-17 Document Number: 96253 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000