VS-61CTQ035-M3, VS-61CTQ040-M3, VS61CTQ045-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 30 A FEATURES Base 2 common 175 C T operation J cathode Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical Anode 2 Anode strength and moisture resistance 13Common 3L TO-220AB cathode Guard ring for enhanced ruggedness and long term reliability PRIMARY CHARCTERISTICS Designed and qualified according to JEDEC -JESD 47 I 2 x 30 A F(AV) Material categorization: for definitions of compliance V 35 V, 40 V, 45 V please see www.vishay.com/doc 99912 R V at I 0.57 V F F DESCRIPTION I max. 40 mA at 125 C RM This center tap Schottky rectifier has been optimized for low T max. 175 C J reverse leakage at high temperature. The proprietary barrier E 27 mJ AS technology allows for reliable operation up to 175 C junction temperature. Typical applications are in switching Package 3L TO-220AB power supplies, converters, freewheeling diodes, and Circuit configuration Common cathode reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUESUNITS I Rectangular waveform (per device) 60 A F(AV) V 35 to 45 V RRM I T = 142 C (per leg) 60 FRM C A I t = 5 s sine 2600 FSM p V 30 A , T = 125 C 0.57 V F pk J T Range -65 to +175 C J VOLTAGE RATINGS PARAMETER SYMBOLVS-61CTQ035-M3 VS-61CTQ040-M3 VS-61CTQ045-M3 UNITS Maximum DC reverse voltage V R 35 40 45 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS per leg 30 Maximum average I T = 142 C, rated V F(AV) C R forward current per device 60 Peak repetitive forward current per leg I Rated V , square wave, 20 kHz, T = 142 C 60 A FRM R C 5 s sine or 3 s rect. pulse Following any rated load 2600 Maximum peak one cycle non-repetitive I condition and with rated FSM surge current per leg 10 ms sine or 6 ms rect. pulse 350 V applied RRM Non-repetitive avalanche energy per leg E T = 25 C, I = 4 A, L = 3.4 mH 27 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 4A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 18-Aug-17 Document Number: 96280 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-61CTQ035-M3, VS-61CTQ040-M3, VS61CTQ045-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS TYP.MAX. UNITS 30 A 0.57 0.61 T = 25 C J 60 A 0.72 0.76 (1) Maximum forward voltage drop V V FM 30 A 0.53 0.57 T = 125 C J 60 A 0.70 0.74 T = 25 C 0.06 1 J Maximum instantaneous reverse current I Rated DC voltage mA RM T = 125 C 21 40 J Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C 1900 pF T R DC Typical series inductance L Measured from top of terminal to mounting plane 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -65 to +175 C J Stg temperature range Maximum thermal resistance, R DC operation 1.2 thJC junction to case per leg C/W Typical thermal resistance, R Mounting surface, smooth and greased 0.50 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque Non-lubricated threads (lbf in) maximum 12 (10) 61CTQ035 Marking device Case style 3L TO-220AB 61CTQ040 61CTQ045 Revision: 18-Aug-17 Document Number: 96280 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000