VS-62CTQ030-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 30 A FEATURES Base 2 common 150 C T operation J cathode Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical Anode 2 Anode strength and moisture resistance 13Common Guard ring for enhanced ruggedness and long term 3L TO-220AB cathode reliability Designed and qualified according to JEDEC -JESD 47 PRIMARY CHARACTERISTICS Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 I 2 x 30 A F(AV) V 30 V R DESCRIPTION V at I 0.44 V F F This center tap Schottky rectifier has been optimized for low I max. 350 mA at 125 C RM reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 C T max. 150 C J junction temperature. Typical applications are in switching E 13 mJ AS power supplies, converters, freewheeling diodes, and Package 3L TO-220AB reverse battery protection. Circuit configuration Common cathode MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUESUNITS I Rectangular waveform (per device) 60 A F(AV) V 30 V RRM I T = 120 C (per leg) 60 FRM C A I t = 5 s sine 1500 FSM p V 30 A , T = 125 C 0.44 V F pk J T Range -65 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-62CTQ030-M3 UNITS Maximum DC reverse voltage V R 30 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS per leg 30 Maximum average forward I 50 % duty cycle at T = 120 C, rectangular waveform F(AV) C current per device 60 Peak repetitive forward current per leg I Rated V , square wave, 20 kHz, T = 127 C 60 FRM R C A 5 s sine or 3 s rect. pulse Following any rated load 1500 Maximum peak one cycle non-repetitive I condition and with rated FSM surge current per leg 10 ms sine or 6 ms rect. pulse V applied 300 RRM Non-repetitive avalanche energy per leg E T = 25 C, I = 3 A, L = 2.9 mH 13 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 3A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 15-Aug-17 Document Number: 96255 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-62CTQ030-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS TYP.MAX. UNITS 30 A 0.46 0.5 T = 25 C J 60 A 0.56 0.6 (1) Maximum forward voltage drop V V FM 30 A 0.39 0.44 T = 125 C J 60 A 0.54 0.59 T = 25 C 0.4 2.5 J Maximum instantaneous reverse current I Rated DC voltage mA RM T = 125 C 180 350 J Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C 3000 pF T R DC Typical series inductance L Measured from top of terminal to mounting plane 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction temperature range T -65 to +150 J C Maximum storage temperature range T -65 to +175 Stg Maximum thermal resistance, R DC operation 1.2 thJC junction to case per leg C/W Typical thermal resistance, R Mounting surface, smooth and greased 0.50 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque Non-lubricated threads (lbf in) maximum 12 (10) Marking device Case style 3L TO-220AB 62CTQ030 Revision: 15-Aug-17 Document Number: 96255 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000