SBRT3U60SAF Green 3A Trench SBR TRENCH SUPER BARRIER RECTIFIER Product Summary Features and Benefits V (MAX) (V) I (mA) F R(MAX) Patented Trench Super Barrier Rectifier SBR Technology V (V) I (A) RRM O +25C +25C Ultra-low Forward Voltage Drop (V ) Better Efficiency and F 60 3 0.53 0.5 Cooler Operation Reduced High Temperature Reverse Leakage Increased Reliability against Thermal Runaway Failure in High Temperature Operation Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data The device is a 3A 60V single rectifier packaged in the low profile Case: SMAF SMAF package. Providing low V and excellent reverse leakage F Case Material: Molded Plastic, Green Molding Compound UL stability at high temperatures, this device is ideal for use in general Flammability Classification Rating 94V-0 rectification applications such as: Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Boost Diode Solderable per MIL-STD-202, Method 208 Blocking Diode Polarity: Cathode Band Recirculating Diode Weight: 0.035 grams (Approximate) SMAF Device Symbol Ordering Information (Note 4) Part Number Case Packaging SBRT3U60SAF-13 SMAF 10,000/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See SBRT3U60SAF Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Value Unit V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage 60 V V RWM DC Blocking Voltage V RM Average Rectified Output Current I 3 A O Non-Repetitive Peak Forward Surge Current 8.3ms 40 A I FSM Single Half Sine-Wave Superimposed on Rated Load Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance Junction to Ambient (Note 5) R 95 C/W JA Typical Thermal Resistance Junction to Case (Note 5) R 30 C/W JC Operating and Storage Temperature Range -55 to +150 C T , T J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition I = 2A, T = +25C 0.40 F J Forward Voltage Drop V 0.45 0.53 V I = 3A, T = +25C F F J 0.46 I = 3A, T = +125C F J 0.5 V = 60V, T = +25C R J Leakage Current (Note 6) I mA R 30 V = 60V, T = +125C R J Notes: 5. Device mounted on FR-4 substrate, 0.4 *0.5 , 2oz, single-sided, PC boards with 0.2 *0.25 copper pad. 6. Short duration pulse test used to minimize self-heating effect. 100 10 o 150 C 10 o 150 C 1 o 125 C o 1 85 C o o 125 C 100 C 0.1 0.01 o 25 C o 100 C 0.001 0.1 o 85 C 0.0001 o 25 C 1E-05 o o -55 C -55 C 0.01 1E-06 0.0 0.2 0.4 0.6 0.8 1.0 10 20 30 40 50 60 70 V , INSTANTANEOUS REVERSE VOLTAGE (V) V , INSTANTANEOUS FORWARD VOLTAGE (V) R F Figure 1. Typical Forward Characteristics Figure 2. Typical Reverse Characteristics 2 of 5 SBRT3U60SAF May 2016 Diodes Incorporated www.diodes.com Document number: DS37869 Rev. 4 - 2 NEW PRODUCT I , INSTANTANEOUS FORWARD CURRENT (A) F REVERSE LEAKAGE CURRENT (mA)