STPSC20H065CT STMicroelectronics

STPSC20H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 (1) K (2) The SiC diode is an ultrahigh performance power A2 (3) Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal A2 K A1 capacitive turn-off behavior is independent of TO-220AB temperature. STPSC20H065CT Especially suited for use in PFC applications, this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases. A2 K Table 1. Device summary A1 Symbol Value TO-247 STPSC20H065CW I 2 x 10 A F(AV) V 650 V RRM T (max) 175 C j Features No or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC applications High forward surge capability November 2013 DocID023605 Rev 3 1/9 This is information on a product in full production. www.st.comCharacteristics STPSC20H065C 1 Characteristics Table 2. Absolute ratings (limiting values per diode at 25 C unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 650 V RRM I Forward rms current 22 A F(RMS) (1) T = 135 C , DC, per diode 10 c I Average forward current A F(AV) (2) T = 125 C , per device 20 c t = 10 ms sinusoidal, T = 25 C 90 p c Surge non repetitive forward I t = 10 ms sinusoidal, T = 125 C 80 A FSM p c current t = 10 s square, T = 25 C 470 p c (1) I Repetitive peak forward current T = 135 C , T = 175 C, = 0.1 36 A FRM c j T Storage temperature range -55 to +175 C stg (3) T Operating junction temperature -40 to +175 C j 1. Value based on R max (per diode) th(j-c) 2. Value based on R max (per device) th(j-c) dPtot 1 --------------- -------------------------- 3. condition to avoid thermal runaway for a diode on its own heatsink dTj Rthj a Table 3. Thermal resistance Value Symbol Parameter Unit Typ. Max. TO-247 Per diode 1.25 1.5 TO-220AB R Junction to case per diode th(j-c) TO-247 C/W Total 0.83 0.95 TO-220AB R Coupling 0.4 th(c) When the two diodes 1 and 2 are used simultaneously: T (diode 1) = P(diode 1) x R (Per diode) + P(diode 2) x R j th(j-c) th(c) Table 4. Static electrical characteristics per diode Symbol Parameter Tests conditions Min. Typ. Max. Unit T = 25 C -9 100 j (1) I Reverse leakage current V = V A R R RRM T = 150 C - 85 425 j T = 25 C -1.56 1.75 j (2) V Forward voltage drop I = 10 A V F F T = 150 C - 1.98 2.5 j 1. t = 10 ms, < 2% p 2. t = 500 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 1.35 x I + 0.115 x I F(AV) F (RMS) 2/9 DocID023605 Rev 3