STPSC20H065CWY STMicroelectronics

STPSC20H065C-Y Automotive 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 (1) K (2) The SiC diode is an ultrahigh performance power A2 (3) Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal A2 K A1 capacitive turn-off behavior is independent of TO-220AB temperature and are ideal for automotive STPSC20H065CTY applications. Especially suited for use in PFC applications, this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during A2 transient phases. K A1 Table 1. Device summary TO-247 Symbol Value STPSC20H065CWY I 2 x 10 A F(AV) V 650 V RRM Features T (max) 175 C j No or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC applications High forward surge capability AEC-Q101 qualified ECOPACK 2 compliant component PPAP capable September 2014 DocID026619 Rev 2 1/9 This is information on a product in full production. www.st.comCharacteristics STPSC20H065C-Y 1 Characteristics Table 2. Absolute ratings (limiting values per diode at 25 C unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 650 V RRM I Forward rms current 22 A F(RMS) (1) Average forward current T = 135 C , DC, per diode 10 c I A F(AV) (2) T = 125 C , DC, per device 20 c t = 10 ms sinusoidal, T = 25 C 90 p c Surge non repetitive I t = 10 ms sinusoidal, T = 125 C 80 A FSM p c forward current t = 10 s square, T = 25 C 470 p c (1) Repetitive peak forward T = 135 C , T = 175 C, = 0.1 I c j 41 A FRM current T Storage temperature range -55 to +175 C stg (3) T Operating junction temperature -40 to +175 C j 1. Value based on R max (per diode) th(j-c) 2. Value based on R max (per device) th(j-c) dPtot 1 --------------- -------------------------- 3. < condition to avoid thermal runaway for a diode on its own heatsink dTj Rth()j a Table 3. Thermal resistance Value Symbol Parameter Unit Typ. Max. TO-247 Per diode 1.25 1.5 TO-220AB Junction to case per diode R th(j-c) TO-247 C/W Total 0.83 0.95 TO-220AB R Coupling 0.4 th(c) When the two diodes 1 and 2 are used simultaneously: T (diode 1) = P(diode 1) x R (Per diode) + P(diode 2) x R j th(j-c) th(c) Table 4. Static electrical characteristics per diode Symbol Parameter Tests conditions Min. Typ. Max. Unit T = 25 C -9 100 j (1) I Reverse leakage current V = V A R R RRM T = 150 C - 85 425 j T = 25 C -1.56 1.75 j (2) V Forward voltage drop I = 10 A V F F T = 150 C - 1.98 2.5 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 1.35 x I + 0.115 x I F(AV) F (RMS) 2/9 DocID026619 Rev 2