STPSC12C065-Y Automotive 650 V power Schottky silicon carbide diode Datasheet - production data Description The SiC diode is an ultrahigh performance power . Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material . allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature and is ideal for automotive applications 2 & 7 Especially suited for use as boost diode, this rectifier will enhance the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases. Features Table 1. Device summary No or negligible reverse recovery Symbol Value Switching behavior independent of temperature I 12 A F(AV) Dedicated to PFC applications V 650 V RRM High forward surge capability T (max) 175 C j AEC-Q101 qualified PPAP capable ECOPACK2 compliant component January 2015 DocID027332 Rev 1 1/8 This is information on a product in full production. www.st.comCharacteristics STPSC12C065-Y 1 Characteristics Table 2. Absolute ratings (limiting values at 25 C unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage, T = -40 C 650 V RRM j I Forward rms current 22 A F(RMS) (1) I Average forward current T = 120 C , = 0.5 12 A F(AV) c t = 10 ms sinusoidal, T = 25 C p c 92 Surge non repetitive forward I t = 10 ms sinusoidal, T = 125 C 84 A FSM p c current 470 t = 10 s square, T = 25 C p c (1) I Repetitive peak forward current T = 120 C , T = 175 C, = 0.1 51 A FRM c j T Storage temperature range -65 to +175 C stg (2) T Operating junction temperature -40 to +175 C j 1. Value based on R max. th(j-c) dPtot 1 --------------- -------------------------- 2. < condition to avoid thermal runaway for a diode on its own heatsink dTj Rth()j a Table 3. Thermal resistance Value Symbol Parameter Unit Typ. Max. R Junction to case 1.2 1.7 C/W th(j-c) Table 4. Static electrical characteristics Symbol Parameter Tests conditions Min. Typ. Max. Unit T = 25 C -10 120 j (1) I Reverse leakage current V = V A R R RRM T = 150 C - 100 500 j T = 25 C -1.56 1.75 j (2) V Forward voltage drop I = 12 A V F F T = 150 C - 1.98 2.5 j 1. t = 10 ms, < 2% p 2. t = 500 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 1.35 x I + 0.096 x I F(AV) F (RMS) Table 5. Dynamic electrical characteristics Symbol Parameter Test conditions Typ. Unit (1) Q Total capacitive charge V = 400 V 29.3 nC cj R V = 0 V, T = 25 C, F = 1 MHz 530 R c C Total capacitance pF j V = 300 V, T = 25 C, F = 1 MHz 55 R c V OUT 1. Most accurate value for the capacitive charge: Q = c (v ).dv cj j R R 0 2/8 DocID027332 Rev 1