STPSC12H065DY STMicroelectronics

STPSC12H065-Y Automotive 650 V power Schottky silicon carbide diode Datasheet - production data A K Description The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a K silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of A temperature. K Especially suited for use in PFC applications, this TO-220AC ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases. Features AEC-Q101 qualified Table 1: Device summary No or negligible reverse recovery Symbol Value Switching behavior independent of IF(AV) 12 A temperature VRRM 650 V Dedicated to PFC applications High forward surge capability Tj (max.) 175 C PPAP capable ECOPACK 2 compliant component October 2016 DocID026617 Rev 4 1/9 www.st.com This is information on a product in full production. Characteristics STPSC12H065-Y 1 Characteristics Table 2: Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 650 V I Forward rms current 22 A F(RMS) (1) I Average forward current TC = 130 C , = 0.5 12 A F(AV) Repetitive peak forward I Tc =110 C, Tj = 150 C, = 0.1 50 A FRM current tp = 10 ms sinusoidal, Tc = 25 C 100 Surge non repetitive forward I tp = 10 ms sinusoidal, Tc = 125 C 90 A FSM current tp = 10 s square, Tc = 25 C 400 T Storage temperature range -55 to +175 C stg (2) Tj Operating junction temperature -40 to +175 C Notes: (1) Value based on R max. th(j-c) (2) (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 3: Thermal parameters Value Symbol Parameter Unit Max. Typ. Rth(j-c) Junction to case 1.00 1.4 C/W Table 4: Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Tj = 25 C - 10 120 (1) IR Reverse leakage current VR = VRRM A T = 150 C - 100 500 j Tj = 25 C - 1.56 1.75 (2) V Forward voltage drop I = 12 A V F F T = 150 C - 1.98 2.5 j Notes: (1) Pulse test: tp = 10 ms, < 2% (2) Pulse test: tp = 500 s, < 2% To evaluate the conduction losses, use the following equation: 2 P = 1.35 x I + 0.096 x I F(AV) F (RMS) 2/9 DocID026617 Rev 4