X-On Electronics has gained recognition as a prominent supplier of STPSC12H065CT Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. STPSC12H065CT Schottky Diodes & Rectifiers are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

STPSC12H065CT STMicroelectronics

STPSC12H065CT electronic component of STMicroelectronics
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Part No.STPSC12H065CT
Manufacturer: STMicroelectronics
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 650V Pwr Schottky Silicn Carbide Diode
Datasheet: STPSC12H065CT Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
50: USD 2.4221 ea
Line Total: USD 121.1 
Availability - 0
MOQ: 50  Multiples: 50
Pack Size: 50
Availability Price Quantity
0
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 50
Multiples : 50
50 : USD 2.1982
150 : USD 2.1168
500 : USD 2.0354
1000 : USD 2.0354
2000 : USD 2.0354

0
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 1000
Multiples : 1000
1000 : USD 2.541

0
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 9.0617
10 : USD 3.2622
100 : USD 2.6719
500 : USD 2.2783
1000 : USD 1.9884

0
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 9.5935
3 : USD 6.2825
7 : USD 5.9433

0
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 50
Multiples : 50
50 : USD 2.4221

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Operating Temperature Range
Brand
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STPSC12H065CT from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STPSC12H065CT and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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STPSC12H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon . carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimized capacitive charge at turn-off behavior is independent of temperature Especially suited for use in interleaved or bridge- less topologies, this dual-diode rectifier will boost the performance in hard switching conditions. Its 2 % 7 high forward surge capability ensures a good robustness during transient phases. Table 1. Device summary Symbol Value Features I 2 x 6 A F(AV) No or negligible reverse recovery V 650 V RRM Switching behavior independent of T (max) 175 C temperature j High forward surge capability ECOPACK 2 compliant component December 2015 DocID024809 Rev 3 1/8 This is information on a product in full production. www.st.comCharacteristics STPSC12H065C 1 Characteristics Table 2. Absolute ratings (limiting values per diode at 25 C unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 650 V RRM I Forward rms current 22 A F(RMS) (1) T = 135 C , DC Per diode 6 A c I Average forward current F(AV) (2) T = 135 C , DC Per device 12 A c t = 10 ms sinusoidal, T = 25 C 60 p c I Surge non repetitive forward current t = 10 ms sinusoidal, T = 125 C 52 A FSM p c t = 10 s square, T = 25 C 400 p c (1) I Repetitive peak forward current T = 135 C , T = 175 C, = 0.1 25 A FRM c j T Storage temperature range -65 to +175 C stg (3) T Operating junction temperature -40 to +175 C j 1. Value based on R max (per diode) th(j-c) 2. Value based on R max (per device) th(j-c) dPtot 1 --------------- -------------------------- 3. condition to avoid thermal runaway for a diode on its own heatsink dTj Rthj a Table 3. Thermal resistance parameters Symbol Parameter Typ. Max. Unit Per diode 1.6 2.4 R Junction to case th(j-c) Per device 0.875 1.275 C/W R Coupling - 0.15 th(c) When the diodes 1 and 2 are used simultaneously: T (diode 1) = P(diode1) x R (Per diode) + P(diode2) x R j th(j-c) th(c) Table 4. Static electrical characteristics (per diode) Symbol Parameter Tests conditions Min. Typ. Max. Unit T = 25 C -5 60 j (1) I Reverse leakage current V = V A R R RRM T = 150 C - 50 250 j T = 25 C - 1.56 1.75 j (2) V Forward voltage drop I = 6 A V F F T = 150 C - 1.98 2.5 j 1. t = 10 ms, < 2% p 2. t = 500 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 1.35 x I + 0.192 x I F(AV) F (RMS) 2/8 DocID024809 Rev 3

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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