STPS80170CW STMicroelectronics

STPS80170C Datasheet 170 V power Schottky rectifier Features A1 K A2 High junction temperature capability Low leakage current Good trade off between leakage current and forward voltage drop Low thermal resistance High frequency operation A2 Avalanche capability TO-247 K A1 ECOPACK 2 compliant Applications Switching diode SMPS DC/DC converter Telecom power Description This dual diode common cathode Schottky rectifier is suited for high frequency switched mode power supplies. Packaged in TO-247, the STPS80170C is optimized for use to enhance the reliability of the application. Product status STPS80170C Product summary I 2 x 40 A F(AV) V 170 V RRM T 175 C j(max.) V 0.68 V F(typ.) DS4415 - Rev 3 - August 2018 www.st.com For further information contact your local STMicroelectronics sales office.STPS80170C Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values per diode at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 170 V RRM I Forward rms current 80 A F(RMS) T = 150 C Per diode 40 c I Average forward current, = 0.5, square wave A F(AV) T = 140 C Per device 80 c I Surge non repetitive forward current t = 10 ms sinusoidal 500 A FSM p P Repetitive peak avalanche power t = 10 s, T = 125 C 2750 W ARM p j T Storage temperature range -65 to +175 C stg (1) T +175 C j Maximum operating junction temperature 1. (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 2. Thermal resistance parameters Symbol Parameter Max. value Unit Per diode 0.7 R Junction to case C/W th(j-c) Total 0.5 R Coupling 0.3 C/W th(c) When the diodes 1 and 2 are used simultaneously: T = P x R (per diode) + P x R j (diode1) (diode1) th(j-c) (diode2) th(c) For more information, please refer to the following application note : AN5088 : Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 80 A j (1) I Reverse leakage current V = V R RRM R T = 125 C - 20 80 mA j T = 25 C - 0.84 j I = 40 A F T = 125 C - 0.68 0.74 j (2) V Forward voltage drop V F T = 25 C - 0.96 j I = 80 A F T = 125 C - 0.80 0.86 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t =380 s, < 2% p 2 To evaluate the conduction losses, use the following equation: P = 0.62 x I + 0.003 x I F(AV) F (RMS) For more information, please refer to the following application notes related to the power losses : AN604: Calculation of conduction losses in a power rectifier AN4021: Calculation of reverse losses on a power diode DS4415 - Rev 3 page 2/9