STPSC15H12-Y Automotive grade 1200 V power Schottky silicon carbide diode Datasheet - production data A K Description The SiC diode, available in TO-220AC, is an ultrahigh performance power Schottky rectifier. It K is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off A behavior is independent of temperature. K Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the TO-220AC performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge Features capability ensures a good robustness during AEC-Q101 qualified transient phases. No or negligible reverse recovery Table 1: Device summary Switching behavior independent of Symbol Value temperature Robust high voltage periphery IF(AV) 15 A PPAP capable V 1200 V RRM Operating T from -40 C to 175 C j Tj (max.) 175 C V (typ.) 1.35 V F January 2017 DocID029723 Rev 1 1/8 www.st.com This is information on a product in full production. Characteristics STPSC15H12-Y 1 Characteristics Table 2: Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage (Tj = -40 C to +175 C) 1200 V I Forward rms current 38 A F(RMS) I Average forward current TC = 155 C, DC current 15 A F(AV) Repetitive peak forward I T = 155 C, T = 175 C, = 0.1 58 A FRM C j current TC = 25 C 105 t = 10 ms sinusoidal p Surge non repetitive I T = 150 C 90 A FSM C forward current tp = 10 s square TC = 25 C 630 T Storage temperature range -65 to +175 C stg Tj Operating junction temperature -40 to +175 C Table 3: Thermal parameters Typ. Max. Symbol Parameter Unit value value R Junction to case 0.45 0.6 C/W th(j-c) Table 4: Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 7.5 90 j (1) IR Reverse leakage current VR = VRRM A Tj = 150 C - 45 600 T = 25 C - 1.35 1.50 j (2) VF Forward voltage drop IF = 15 A V Tj = 150 C - 1.75 2.25 Notes: (1) Pulse test: t = 10 ms, < 2% p (2) Pulse test: t = 500 s, < 2% p To evaluate the conduction losses use, the following equation: 2 P = 1.09 x IF(AV) + 0.0775 x IF (RMS) Table 5: Dynamic electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit (1) Q Total capacitive charge V = 800 V - 94 - nC Cj R VR = 0 V, Tc = 25 C, F = 1 MHz - 1200 - C Total capacitance pF j V = 800 V, T = 25 C, F = 1 MHz - 78 - R c Notes: (1) Most accurate value for the capacitive charge: ( ) = ( ) 0 2/8 DocID029723 Rev 1