STPSC20065GY-TR STMicroelectronics

STPSC20065-Y Automotive 650 V power Schottky silicon carbide diode Datasheet - production data A Description K K The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode A A structure with a 650 V rating. Due to the Schottky K K construction, no recovery is shown at turn-off and DO-247 TO-220AC ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard DPAK switching conditions. Its high forward surge capability ensures good robustness during transient phases. Features AEC-Q101 qualified Table 1: Device summary No reverse recovery charge in application Symbol Value current range IF(AV) 20 A Switching behavior independent of temperature V 650 V RRM Dedicated to PFC applications Tj (max.) 175 C High forward surge capability V (typ.) 1.30 V F ECOPACK 2 compliant component PPAP capable Operating T from -40 C to 175 C j November 2017 DocID029260 Rev 2 1/14 www.st.com This is information on a product in full production. Characteristics STPSC20065-Y 1 Characteristics Table 2: Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage (Tj = -40 C to +175 C) 650 V I Forward rms current 40 A F(RMS) I Average forward current Tc = 140 C, DC current 20 A F(AV) tp = 10 ms sinusoidal, Tc = 25 C 90 Surge non repetitive forward IFSM tp = 10 ms sinusoidal, Tc = 125 C 70 A current tp = 10 s square, Tc = 25 C 400 Repetitive peak forward I T = 140 C, T = 175 C, = 0.1 87 A FRM c j current Tstg Storage temperature range -55 to +175 C (1) T Operating junction temperature -40 to +175 C j Notes: (1) (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 3: Thermal parameters Value Symbol Parameter Unit Typ. Max. Rth(j-c) Junction to case 0.60 0.90 C/W Table 4: Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Tj = 25 C - 30 300 V = V R RRM (1) I Reverse leakage current T = 150 C - 280 2000 A R j Tj = 25 C VR = 600 V 15 150 T = 25 C - 1.30 1.45 j (2) VF Forward voltage drop Tj = 150 C IF = 20 A - 1.45 1.65 V T = 175 C - 1.5 j Notes: (1) Pulse test: tp = 5 ms, < 2% (2) Pulse test: tp = 500 s, < 2% To evaluate the conduction losses use the following equation: 2 P = 1.02 x I + 0.039 x I F(AV) F (RMS) 2/14 DocID029260 Rev 2