X-On Electronics has gained recognition as a prominent supplier of STPSC20H065CTY Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. STPSC20H065CTY Schottky Diodes & Rectifiers are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

STPSC20H065CTY STMicroelectronics

STPSC20H065CTY electronic component of STMicroelectronics
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Part No.STPSC20H065CTY
Manufacturer: STMicroelectronics
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers DFD THYR TRIAC & RECTIFIER
Datasheet: STPSC20H065CTY Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
50: USD 3.7946 ea
Line Total: USD 189.73 
Availability - 0
MOQ: 50  Multiples: 50
Pack Size: 50
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 6.2699
2000 : USD 6.2413
3000 : USD 6.2114
4000 : USD 6.1828
5000 : USD 6.1529
10000 : USD 6.123
20000 : USD 6.0918
25000 : USD 6.0619
50000 : USD 6.0307

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 50
Multiples : 50
50 : USD 3.7946
150 : USD 3.5134
250 : USD 3.5134
750 : USD 3.5134
1250 : USD 3.5134

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 4.4862

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 9.9393
10 : USD 6.5347

   
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We are delighted to provide the STPSC20H065CTY from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STPSC20H065CTY and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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STPSC20H065C-Y Automotive 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 (1) K (2) The SiC diode is an ultrahigh performance power A2 (3) Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal A2 K A1 capacitive turn-off behavior is independent of TO-220AB temperature and are ideal for automotive STPSC20H065CTY applications. Especially suited for use in PFC applications, this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during A2 transient phases. K A1 Table 1. Device summary TO-247 Symbol Value STPSC20H065CWY I 2 x 10 A F(AV) V 650 V RRM Features T (max) 175 C j No or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC applications High forward surge capability AEC-Q101 qualified ECOPACK 2 compliant component PPAP capable September 2014 DocID026619 Rev 2 1/9 This is information on a product in full production. www.st.comCharacteristics STPSC20H065C-Y 1 Characteristics Table 2. Absolute ratings (limiting values per diode at 25 C unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 650 V RRM I Forward rms current 22 A F(RMS) (1) Average forward current T = 135 C , DC, per diode 10 c I A F(AV) (2) T = 125 C , DC, per device 20 c t = 10 ms sinusoidal, T = 25 C 90 p c Surge non repetitive I t = 10 ms sinusoidal, T = 125 C 80 A FSM p c forward current t = 10 s square, T = 25 C 470 p c (1) Repetitive peak forward T = 135 C , T = 175 C, = 0.1 I c j 41 A FRM current T Storage temperature range -55 to +175 C stg (3) T Operating junction temperature -40 to +175 C j 1. Value based on R max (per diode) th(j-c) 2. Value based on R max (per device) th(j-c) dPtot 1 --------------- -------------------------- 3. < condition to avoid thermal runaway for a diode on its own heatsink dTj Rth()j a Table 3. Thermal resistance Value Symbol Parameter Unit Typ. Max. TO-247 Per diode 1.25 1.5 TO-220AB Junction to case per diode R th(j-c) TO-247 C/W Total 0.83 0.95 TO-220AB R Coupling 0.4 th(c) When the two diodes 1 and 2 are used simultaneously: T (diode 1) = P(diode 1) x R (Per diode) + P(diode 2) x R j th(j-c) th(c) Table 4. Static electrical characteristics per diode Symbol Parameter Tests conditions Min. Typ. Max. Unit T = 25 C -9 100 j (1) I Reverse leakage current V = V A R R RRM T = 150 C - 85 425 j T = 25 C -1.56 1.75 j (2) V Forward voltage drop I = 10 A V F F T = 150 C - 1.98 2.5 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 1.35 x I + 0.115 x I F(AV) F (RMS) 2/9 DocID026619 Rev 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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