STPSC20H12-Y Datasheet Automotive 1200 V, 20 A, silicon carbide power Schottky diode Features A K K K AEC-Q101 qualified K No or negligible reverse recovery A Switching behavior independent of temperature A NC K Robust high voltage periphery DPAK TO-220AC PPAP capable K Operating T from -40 C to 175 C j DPAK HV creepage distance (anode to cathode) = 5.38 mm min. A ECOPACK compliant A NC DPAK HV Applications Product label On board charger Description The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, the STPSC20H12-Y will boost Product status link performance in hard switching conditions. Its high forward surge capability ensures STPSC20H12-Y good robustness during transient phases. Product summary I 20 A F(AV) V 1200 V RRM T (max.) 175 C j V (typ.) 1.35 V F DS11830 - Rev 4 - May 2019 www.st.com For further information contact your local STMicroelectronics sales office.STPSC20H12-Y Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage (T = -40 C to +175 C) 1200 V RRM j I Forward rms current 38 A F(RMS) I T = 155 C, DC current Average forward current 20 A F(AV) c I T =155 C, T = 175 C, = 0.1 Repetitive peak forward current 78 A FRM c j t = 10 ms sinusoidal, T = 25 C 140 p c I Surge non repetitive forward current t = 10 ms sinusoidal, T = 150 C 120 A FSM p c t = 10 s square, T = 25 C 700 p c T Storage temperature range -55 to +175 C stg (1) T Operating junction temperature -40 to +175 C j 1. (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 2. Thermal resistance parameters Value Symbol Parameter Unit Typ. Max. R Junction to case 0.30 0.45 C/W th(j-c) Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 10 120 j (1) V = V I Reverse leakage current A R R RRM T = 150 C - 60 800 j T = 25 C - 1.35 1.50 j (2) V Forward voltage drop I = 20 A V F F T = 150 C - 1.75 2.25 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 500 s, < 2% p 2 To evaluate the conduction losses, use the following equation: P = 1.07 x I + 0.059 x I F(AV) F (RMS) Table 4. Dynamic electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit (1) V = 800 V Q Total capacitive charge - 129 - nC Cj R V = 0 V, T = 25 C, F = 1 MHz - 1650 - R c C Total capacitance pF j V = 800 V, T = 25 C, F = 1 MHz R c - 110 - 1. V R Most accurate value for the capacitive charge: Q V = C V dV c j R j 0 DS11830 - Rev 4 page 2/14