STPSC20065D STMicroelectronics

STPSC20065 650 V power Schottky silicon carbide diode Datasheet - production data A K Description The SiC diode is an ultra high performance K NC power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky A A construction, no recovery is shown at turn-off and K K TO-220AC ringing patterns are negligible. The minimal TO-220AC Ins capacitive turn-off behavior is independent of temperature. A Especially suited for use in PFC applications, this K ST SiC diode will boost performance in hard DO-247 switching conditions. Its high forward surge capability ensures good robustness during transient phases. Features No reverse recovery charge in application Table 1: Device summary current range Symbol Value Switching behavior independent of IF(AV) 20 A temperature Dedicated to PFC applications VRRM 650 V Insulated package TO-220AC ins: Tj (max.) 175 C Insulated voltage: 2500 V rms V (typ.) 1.30 V F Typical package capacitance: 7 pF High forward surge capability ECOPACK2 compliant component Maximum operating: Tj 175 C July 2017 DocID029246 Rev 2 1/13 www.st.com This is information on a product in full production. Characteristics STPSC20065 1 Characteristics Table 2: Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 650 V I Forward rms current 40 A F(RMS) TO-220AC, DO-247 TC = 140 C, DC current Average forward IF(AV) 20 A current TO-220AC Ins TC = 85 C, DC current T = 140 C, T = 175 C, C j TO-220AC, DO-247 87 = 0.1 Repetitive peak I A FRM forward current TC = 85 C, Tj = 175 C, TO-220AC Ins 83 = 0.1 tp = 10 ms sinusoidal TC = 25 C 90 Surge non t = 10 ms sinusoidal IFSM repetitive p TC = 125 C 70 A forward current t = 10 s square p TC = 25 C 400 Tstg Storage temperature range -55 to +175 C (1) T Operating junction temperature range -40 to +175 C j Notes: (1) (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Table 3: Thermal parameters Value Symbol Parameter Package Unit Typ. Max. TO-220AC 0.60 0.90 DO-247 R Junction to case C/W th(j-c) TO-220AC Ins 1.60 2.50 Table 4: Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 30 300 j VR = VRRM (1) IR Reverse leakage current Tj = 150 C - 280 2000 A T = 25 C V = 600 V 15 150 j R Tj = 25 C - 1.30 1.45 (2) V Forward voltage drop T = 150 C I = 20 A - 1.45 1.65 V F j F Tj = 175 C - 1.5 Notes: (1) Pulse test: t = 5 ms, < 2% p (2) Pulse test: t = 500 s, < 2% p 2/13 DocID029246 Rev 2