Silicon Carbide Schottky Diode 650 V, 20 A FFSD2065B Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher www.onsemi.com reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. 1, 2, 4 Cathode 3 Anode Schottky Diode Features Max Junction Temperature 175C Avalanche Rated 94 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery/No Forward Recovery These Devices are PbFree, Halogen Free/BFR Free and are RoHS DPAK3 (TO252, 3 LD) Compliant CASE 369AS Applications General Purpose MARKING DIAGRAM SMPS, Solar Inverter, UPS Power Switching Circuit Y&Z&3&K ABSOLUTE MAXIMUM RATINGS FFS (T = 25C, Unless otherwise specified) C D2065B Symbol Parameter Value Unit V Peak Repetitive Reverse Voltage 650 V RRM E Single Pulse Avalanche Energy (Note 1) 94 mJ AS I Continuous Rectified Forward Current 20 A F Y = ON Semiconductor Logo T < 143C C &Z = Assembly Plant Code &3 = Numeric Date Code Continuous Rectified Forward Current 23.4 T < 135C &K = Lot Code C FFSD2065B = Specific Device Code I NonRepetitive 763 A T = 25C, 10 s F, Max C Peak Forward T = 150C, 10 s 650 Surge Current C I NonRepetitive HalfSine Pulse, 80 A ORDERING INFORMATION F, SM Forward Surge t = 8.3 ms p See detailed ordering and shipping information in the package Current dimensions section on page 2 of this data sheet. P Power Dissipation T = 25C 160 W tot C T = 150C 27 C T , T Operating and Storage Temperature 55 to +175 J STG C Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. E of 94 mJ is based on starting T = 25C, L = 0.5 mH, I = 19.4 A, V = 50 V. AS J AS Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: October, 2020 Rev. 3 FFSD2065B/DFFSD2065B THERMAL CHARACTERISTICS Symbol Parameter Ratings Unit R Thermal Resistance, Junction to Case, Max. 0.94 C/W JC PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Shipping FFSD2065B FFSD2065B DPAK3 2500 / Tape & Reel (PbFree / Halogen Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D ELECTRICAL CHARACTERISTICS T = 25C unless otherwise noted C Symbol Parameter Test Conditions Min. Typ. Max. Unit V Forward Voltage I = 20 A, T = 25C 1.38 1.7 V F F C I = 20 A, T = 125C 1.6 2.0 F C I = 20 A, T = 175C 1.72 2.4 F C I Reverse Current V = 650 V, T = 25C 0.5 40 A R R C V = 650 V, T = 125C 1 80 R C V = 650 V, T = 175C 2 160 R C Q Total Capacitive Charge V = 400 V 51 nC C C Total Capacitance pF V = 1 V, f = 100 kHz 866 R V = 200 V, f = 100 kHz 80 R V = 400 V, f = 100 kHz 70 R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2