2ED28073J06FXUMA1 Infineon

2ED28073J06F 2ED28073J06F 600 V half-bridge gate driver with integrated bootstrap diode Features Product summary Negative VS transient immunity of 70 V, dV/dt immune V = 600 V max S OFFSET Lower di/dt gate driver for better noise immunity I / I (typ) = + 20 mA/ - 80 mA O+ pk O- pk Floating channel designed for bootstrap operation V = 10 V to 20 V CC Operating voltages (VS node) upto + 600 V Delay matching = 50 ns max. Maximum bootstrap voltage (VB node) of + 625 V Deadtime (typ.) = 300 ns Integrated bootstrap diode t / t (typ.) = 530 ns/ 530 ns ON OFF Integrated shoot-through protection with built-in dead time Integrated short pulse / noise rejection filter on input Independent under voltage lockout for both high and low side Package Schmitt trigger inputs with hysteresis 3.3 V, 5 V and 15 V input logic compatible Maximum supply voltage of 25 V Outputs in phase with inputs Suitable for both trapezoidal and sinusoidal motor control Available in small footprint DSO-8 RoHS compliant 8-Lead DSO-8 Potential applications Driving IGBTs, enhancement mode N-Channel MOSFETs in various motor control applications. Infineon recommendation for driving fast body diode CoolMOS PFD7 super junction MOSFETs and IGBTs in Refrigeration Compressors Air Conditioner fans Washing Machines and dishwasher pumps General Purpose Inverters Micro/Mini Inverter Drives Product validation Qualified for industrial applications according to the relevant tests of JEDEC78/20/22 Ordering information Standard pack Base part number Package type Orderable part number Form Quantity 2ED28073J06F DSO-8 Tape and Reel 2500 2ED28073J06FXUMA1 Description The 2ED28073J06F is a high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high-pulse current buffer stage designed for minimum driver cross-conduction. The Datasheet Please read the Important Notice and Warnings at the end of this document V 2.0 www.infineon.com Page 1 of 26 2020-04-23 2ED28073J06F 600V Half-Bridge gate driver with integrated bootstrap diode floating channel can be used to drive N-channel power MOSFETs or IGBTs in the high side configuration which operates up to 600V. Up to 600V V CC V V B CC HO HIN HIN V LIN LIN S TO LOAD COM LO Refer to lead assignments for correct pin configuration. This diagram shows electrical connections only. Please refer to our application notes and design tips for proper circuit board layout. Figure 1 Typical application block diagram Datasheet 2 of 26 V 2.00