Silicon Carbide Schottky Diode 650 V, 10 A FFSD1065A Description www.onsemi.com Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of 1, 2, 4. Cathode 3. Anode power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and Schottky Diode reduced system size and cost. Features 4 Max Junction Temperature 175C Avalanche Rated 64 mJ High Surge Current Capacity 2 1 Positive Temperature Coefficient Ease of Paralleling 3 No Reverse Recovery/No Forward Recovery DPAK3 (TO252, 3 LD) This Device is PbFree, Halogen Free/BFR Free and RoHS CASE 369AS Compliant Applications MARKING DIAGRAM General Purpose SMPS, Solar Inverter, UPS Power Switching Circuits Y&Z&3&K FFS D1065A Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot FFSD1065A = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: January, 2020 Rev. 3 FFSD1065A/DFFSD1065A MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Rating Parameter FFSD1065A Unit V Peak Repetitive Reverse Voltage 650 V RRM E Single Pulse Avalanche Energy (Note 1) 64 mJ AS I Continuous Rectified Forward Current T < 158C 10 A F C Continuous Rectified Forward Current T < 135C 18 C I NonRepetitive Peak Forward Surge Current T = 25C, 10 s A 760 F,MAX C 740 A T = 150C, 10 s C I NonRepetitive Forward Surge Current HalfSine Pulse, tp = 8.3 ms 56 A F,SM I Repetitive Forward Surge Current HalfSine Pulse, tp = 8.3 ms 34 A F,RM Ptot Power Dissipation T = 25C 150 W C T = 150C 25 W C T . T Operating and Storage Temperature Range 55 to + 175 C J STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max. 1.0 C/W JC ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Symbol Parameter Test Condition Min Typ Max Unit OFF CHARACTERISTICS V Forward Voltage I = 10 A, T = 25C 1.50 1.75 V F F C I = 10 A, T = 125C 1.6 2.0 F C I = 10 A, T = 175C 1.72 2.4 F C I Reverse Current V = 650 V, T = 25C 200 A R R C V = 650 V, T = 125C 400 R C V = 650 V, T = 175C 600 R C Q Total Capacitive Charge V = 400 V 34 nC C C Total Capacitance V = 1 V, f = 100 kHz 575 pF R V = 200 V, f = 100 kHz 62 R V = 400 V, f = 100 kHz 47 R 1. E of 64 mJ is based on starting T = 25C L = 0.5 mH, I = 16 A, V = 50 V. AS J AS ORDERING INFORMATION Device Marking Package Reel Size Tape Width Quantity FFSD1065A FFSD1065A DPAK3 13 N/A 2500 For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D www.onsemi.com 2