M30x5S, MB30x5S, MI30x5S
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Vishay General Semiconductor
Schottky Barrier Rectifier
FEATURES
TO-220AB
Power pack
Guardring for overvoltage protection
Low power loss, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
3
2
Meets MSL level 1, per J-STD-020, LF maximum peak of
1
M30xxS
245 C (for TO-263AB package)
PIN 1 PIN 2
Solder bath temperature 275 C maximum, 10 s per
PIN 3 CASE
JESD22-B106 (for TO-220AB and TO-262AA package)
Material categorization: For definitions of compliance
TO-263AB TO-262AA
please see www.vishay.com/doc?99912
K
K
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
A
converters, and polarity protection application.
NC 3
2
MECHANICAL DATA
1
MB30xxS MI30xxS
Case: TO-220AB, TO-263AB, and TO-262AA
NC PIN 1
K PIN 2
Molding compound meets UL 94 V-0 flammability rating
HEATSINK K
A PIN 3
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
PRIMARY CHARACTERISTICS
E3 suffix meets JESD 201 class 1A whisker test
I 30 A
F(AV)
Polarity: As marked
V 35 V, 45 V
RRM
I 200 A Mounting Torque: 10 in-lbs maximum
FSM
V at I = 30 A 0.61 V
F F
T max. 150 C
J
TO-220AB, TO-263AB,
Package
TO-262AA
Diode variations Single
MAXIMUM RATINGS (T = 25 C unless otherwise noted)
A
PARAMETER SYMBOL M(B,I)3035S M(B,I)3045S UNIT
Maximum repetitive peak reverse voltage V 35 45 V
RRM
Maximum average forward rectified current (fig.1) I 30 A
F(AV)
Peak forward surge current 10 ms single half sine-wave
I 200
FSM
superimposed on rated load
A
Peak repetitive reverse current at t = 2.0 s, 1 kHz I 2.0
p RRM
Voltage rate of change (rated V ) dV/dt 10 000 V/s
R
T - 65 to + 150
J
Operating junction and storage temperature range C
T - 65 to + 175
STG
Revision: 13-Aug-13 Document Number: 88952
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000M30x5S, MB30x5S, MI30x5S
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
A
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNIT
I = 15 A 0.54 -
F
T = 25 C
J
I = 30 A 0.65 0.70
F
(1)
Maximum instantaneous forward voltage V V
F
I = 15 A 0.46 -
F
T = 125 C
J
I = 30 A 0.61 0.66
F
T = 25 C 40 200 A
Maximum instantaneous reverse current at DC J
(2)
I Rated V
R R
blocking voltage
T = 125 C 26 55 mA
J
Typical junction capacitance C 4.0 V, 1 MHz 980 pF
J
Note
(1)
Pulse test: 300 s pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted)
A
PARAMETER SYMBOL M30xxS MB30xxS MI30xxS UNIT
Typical thermal resistance R 2.0 C/W
JC
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB M3045S-E3/4W 1.878 4W 50/tube Tube
TO-263AB MB3045S-E3/4W 1.37 4W 50/tube Tube
TO-263AB MB3045S-E3/8W 1.37 8W 800/reel Tape and reel
TO-263AA MI3045S-E3/4W 1.454 4W 50/tube Tube
RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted)
A
35 300
M(B,I)30xxS T = T Max.
J J
8.3 ms Single Half Sine-Wave
30
250
25
200
M30xxS
20
150
15
100
10
50
5
0 0
0725 505 100 125150 111000
Case Temperature (C) Number of Cycles at 60 Hz
Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Revision: 13-Aug-13 Document Number: 88952
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Average Forward Current (A)
Peak Forward Surge Current (A)