X-On Electronics has gained recognition as a prominent supplier of VS-83CNQ080APBF Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. VS-83CNQ080APBF Schottky Diodes & Rectifiers are a product manufactured by Vishay. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

VS-83CNQ080APBF Vishay

VS-83CNQ080APBF electronic component of Vishay
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Part No.VS-83CNQ080APBF
Manufacturer: Vishay
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 80 Amp 80 Volt Common Cathode
Datasheet: VS-83CNQ080APBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 16.8829
10 : USD 15.3537
25 : USD 14.2042
50 : USD 13.4345
100 : USD 12.5826
250 : USD 12.5313
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Height
Length
Operating Temperature Range
Width
Brand
Product Type
Factory Pack Quantity :
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We are delighted to provide the VS-83CNQ080APBF from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VS-83CNQ080APBF and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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VS-83CNQ...APbF Series www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier Gen 3, D-61 Package, 2 x 40 A FEATURES VS-83CNQ...APbF Base 175 C T operation J common Available Center tap module cathode Low forward voltage drop Available High frequency operation 12 3 Anode Common Anode High power discrete 1 2 cathode D-61-8 High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance VS-83CNQ...ASMPbF Guard ring for enhanced ruggedness and long term reliability New fully transfer-mold low profile, small footprint, high current package 12 3 Through-hole versions are currently available for use in Anode Common Anode 1 2 cathode lead (Pb)-free applications (PbF suffix) Designed and qualified for industrial level D-61-8-SM Material categorization: for definitions of compliance VS-83CNQ...ASLPbF please see www.vishay.com/doc 99912 Base common Note cathode * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. 13 Please see the information / tables in this datasheet for details. Anode Anode 1 2 D-61-8-SL DESCRIPTION The center tap Schottky rectifier module series has been PRODUCT SUMMARY optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation Package D-61 up to 175 C junction temperature. Typical applications are I 2 x 40 A F(AV) in switching power supplies, converters, freewheeling V 80 V, 100 V R diodes, and reverse battery protection. V at I 0.81 F F I max. 35 mA at 125 C RM T max. 175 C J Diode variation Common cathode E 15 mJ AS MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 80 A F(AV) V 80, 100 V RRM I t = 5 s sine 7000 A FSM p V 40 A , T = 125 C (per leg) 0.67 V F pk J T Range -55 to +175 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-83CNQ080APbF VS-83CNQ100APbF UNITS Maximum DC reverse voltage V R 80 100 V Maximum working peak reverse voltage V RWM Revision: 17-Jun-15 Document Number: 94259 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-83CNQ...APbF Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I 50 % duty cycle at T = 132 C, rectangular waveform 80 F(AV) C See fig. 5 A Maximum peak one cycle non-repetitive 5 s sine or 3 s rect. pulse Following any rated 7000 surge current per leg I load condition and with FSM 10 ms sine or 6 ms rect. pulse 720 See fig. 7 rated V applied RRM Non-repetitive avalanche energy per leg E T = 25 C, I = 1 A, L = 30 mH 15 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 1A AR Frequency limited by T maximum V = 1.5 x V typical J A R ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 40 A 0.81 T = 25 C J 80 A 1.00 Maximum forward voltage drop per leg (1) V V FM See fig. 1 40 A 0.67 T = 125 C J 80 A 0.82 T = 25 C 1.5 J Maximum reverse leakage current per leg (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 35 J Maximum junction capacitance per leg C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 1400 pF T R DC Typical series inductance per leg L Measured lead to lead 5 mm from package body 5.5 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -55 to +175 C J Stg temperature range per leg DC operation, see fig. 4 0.85 Maximum thermal R thJC resistance, junction to case per package DC operation 0.42 C/W Typical thermal resistance, Mounting surface, smooth and greased R 0.30 thCS case to heatsink (D-61-8 only) Device flatness < 5 mils 7.8 g Approximate weight 0.28 oz. minimum 12 (10) kgf cm Mounting torque Recommended hardware 3M stainless screw (lbf in) maximum 24 (20) 83CNQ080A Case style D-61 83CNQ100A 83CNQ080ASM Marking device Case style D-61-8-SM 83CNQ100ASM 83CNQ080ASL Case style D-61-8-SL 83CNQ100ASL Revision: 17-Jun-15 Document Number: 94259 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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