M30L40C
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode Schottky Rectifier
FEATURES
Power pack
Guardring for overvoltage protection
TO-220AB
Lower power losses, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Solder dip 275 C max., 10 s, per JESD 22-B106
3
Material categorization: for definitions of compliance
2
1
please see www.vishay.com/doc?99912
PIN 1
PIN 2
TYPICAL APPLICATIONS
CASE
PIN 3
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, or polarity protection application.
PRIMARY CHARACTERISTICS
MECHANICAL DATA
I 2 x 15 A
F(AV)
Case: TO-220AB
V 40 V
RRM Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
E 20 mJ
AS
Terminals: Matte tin plated leads, solderable per
I 280 A
FSM
J-STD-002 and JESD 22-B102
V at I = 15 A 0.413 V
F F
E3 suffix meets JESD 201 class 1A whisker test
T max. 150 C
J
Polarity: As marked
Package TO-220AB
Mounting Torque: 10 in-lbs maximum
Diode variations Common cathode
MAXIMUM RATINGS (T = 25 C unless otherwise noted)
A
PARAMETER SYMBOL M30L40C UNIT
Maximum repetitive peak reverse voltage V 40 V
RRM
total device 30
Maximum average forward rectified current (fig.1) I A
F(AV)
per diode 15
Peak forward surge current 8.3 ms single half sine-wave superimposed on
I 280 A
FSM
rated load per diode
Peak repetitive reverse current per diode at t = 2 s, 1 kHz I 1.0 A
p RRM
Non-repetitive avalanche energy at 25 C, I = 2 A, L = 10 mH per diode E 20 mJ
AS AS
Voltage rate of change (rated V ) dV/dt 10 000 V/s
R
Operating junction and storage temperature range T , T -65 to +150 C
J STG
Revision: 15-Aug-15 Document Number: 89012
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000M30L40C
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
A
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNIT
I = 8 A 0.430 -
F
I = 15 A T = 25 C 0.490 0.55
F J
I = 30 A 0.595 -
F
(1)
Instantaneous forward voltage per diode V V
F
I = 8 A 0.331 -
F
I = 15 A T = 125 C 0.413 0.48
F J
I = 30 A 0.572 -
F
T = 25 C 88 360 A
J
(2)
Reverse current per diode I V = 40 V
R R
T = 100 C 12 45 mA
J
Typical junction capacitance per diode C 4.0 V, 1 MHz 750 - pF
J
Note
(1)
Pulse test: 300 s pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted)
A
PARAMETER SYMBOL M30L40C UNIT
Typical thermal resistance per diode R 2.0 C/W
JC
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
M30L40C-E3/4W 2.068 4W 50/tube Tube
RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted)
A
35 9
D = 0.3 D = 0.8
Resistive or Inductive Load
8 D = 0.5
D = 0.2
30
7
D = 0.1
25
D = 1.0
6
20
5
4
15
T
3
10
2
5
D = t /T t
1
p p
0 0
0 25 50 75 100 125 150
02468 10 12 14 16 18
Average Forward Current (A)
Case Temperature (C)
Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 15-Aug-15 Document Number: 89012
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Average Forward Current (A)
Average Power Loss (W)