Product Information

CUS10S40,H3F

Name: CUS10S40,H3F
Brand: Toshiba
SKU: CUS10S40H3F_Toshiba
Availability: OutOfStock
Rating: 5 (11 reviews)

CUS10S40,H3F electronic component of Toshiba

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Datasheet

Toshiba Schottky Diodes & Rectifiers Single High-speed switching

Manufacturer: Toshiba

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

3000: USD 0.0573 ea
Line Total: USD 171.9

0 - Global Stock

MOQ: 3000 Multiples: 3000
Pack Size: 3000

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Mon. 27 May to Fri. 31 May MOQ : 3000 Multiples : 3000 CUS10S40,H3F Toshiba	3000 : USD 0.0727 6000 : USD 0.0719 9000 : USD 0.0712 12000 : USD 0.0705 15000 : USD 0.0698 24000 : USD 0.0692 30000 : USD 0.0684 75000 : USD 0.0677 150000 : USD 0.0671

0 - WHS 2 Ships to you between Mon. 27 May to Fri. 31 May MOQ : 3000 Multiples : 3000 CUS10S40,H3F Toshiba	3000 : USD 0.0555

0 - WHS 3 Ships to you between Fri. 31 May to Tue. 04 Jun MOQ : 1 Multiples : 1 CUS10S40,H3F Toshiba	1 : USD 0.9883 10 : USD 0.7533 100 : USD 0.171 500 : USD 0.1132 1000 : USD 0.0866 3000 : USD 0.0673

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Additional Infomation About Product

CUS10S40 Schottky Barrier Diode Silicon Epitaxial CUS10S40CUS10S40CUS10S40CUS10S40 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications High-Speed Switching 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Small package (2) Low forward voltage: V (2) = 0.45 V (typ.) F 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Cathode 2: Anode USC Start of commercial production 2013-09 2014-04-07 1 Rev.2.0CUS10S40 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 )) 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 )) aa aa Characteristics Symbol Note Rating Unit Peak reverse voltage V 40 V RM Average rectified current I (Note 1) 1.0 A O Non-repetitive peak forward surge current I (Note 2) 5 A FSM Junction temperature T 125 j Storage temperature T -55 to 125 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board. (25.4 mm 25.4 mm 1.6 mm, Cu Pad: 645 mm2) Note 2: Measured with a 10 ms pulse. 5. 5. 5. 5. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage V (1) I = 0.5 A (Pulse test) 0.35 0.40 V F F Forward voltage V (2) I = 1 A (Pulse test) 0.45 0.50 V F F Reverse current I V = 40 V (Pulse test) 150 A R R Total capacitance C V = 0 V, f = 1 MHz 120 pF t R 6. 6. MarkingMarking 6. 6. MarkingMarking Fig. Fig. Fig. Fig. 6.16.16.16.1 MarkingMarkingMarkingMarking Marking Code Part Number 7C CUS10S40 7. 7. 7. 7. Usage ConsiderationsUsage ConsiderationsUsage ConsiderationsUsage Considerations Schottky barrier diodes (SBDs) have reverse leakage greater than other types of diodes. This makes SBDs more susceptible to thermal runaway under high-temperature and high-voltage conditions. Thus, both forward and reverse power losses of SBDs should be considered for thermal and safety design. 2014-04-07 2 Rev.2.0

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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