CUS10I30A(TE85L,QM Toshiba

CUS10I30A TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CUS10I30A Secondary Rectification in Switching Regulators Unit: mm Reverse-Current Protection in Mobile Devices + 0.2 1.25 0.1 + 0.05 0.13 0.88 0.1 0.03 Forward voltage: V = 0.39 V (max) I = 0.7 A FM FM Forward current (AV): I = 1.0 A F (AV) Repetitive peak reverse voltage: V = 30 V RRM Suitable for high-density board assembly due to the use of a small TM surface-mount package, US-FLAT 0.6 0.1 0.88 0.1 Absolute Maximum Ratings (Ta = 25C) 0.6 0.1 Characteristics Symbol Rating Unit Repetitive peak reverse voltage V 30 V RRM Forward current (AV) I 1.0 (Note 1) A F (AV) 0.78 0.1 ANODE Peak one-cycle surge current I 20 (50 Hz) A FSM CATHODE Junction temperature T 150 C j 0.6 0.1 Storage temperature T -55 to 150 C stg JEDEC Note: Using continuously under heavy loads (e.g. the application of JEITA high temperature/current/voltage and the significant change in TOSHIBA 3-2B1A temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. Weight: 0.004 g (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ta = 44C: Device mounted on a glass-epoxy board Board size: 50 mm 50 mm Soldering size: 6 mm 6 mm Board thickness: 1.6 mm Rectangular waveform ( = 180), V = 15 V R Start of commercial production 2009-11 1 2013-11-01 2.5 0.2 0.6 0.1 1.9 0.1 0 ~ 0.05 0.5 0.1 1.4 0.2 CUS10I30A Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit V I = 0.1 A (pulse test) 0.27 FM (1) FM Peak forward voltage V V I = 0.7 A (pulse test) 0.35 0.39 FM (2) FM V I = 1.0 A (pulse test) 0.37 FM (3) FM I V = 5.0 V (pulse test) 10 RRM (1) RRM Repetitive peak reverse current A I V = 30 V (pulse test) 20 60 RRM (2) RRM Junction capacitance C V = 10 V, f = 1.0 MHz 50 pF j R Device mounted on a ceramic board board size: 50 mm 50 mm 75 soldering land: 2 mm 2 mm board thickness: 0.64 mm Thermal resistance (junction to ambient) R C/W th (j-a) Device mounted on a glass-epoxy board board size: 50 mm 50 mm 150 soldering land: 6 mm 6 mm board thickness: 1.6 mm Thermal resistance (junction to lead) R 30 C/W th (j-) 2 2013-11-01