CUS10S30,H3F(B Toshiba

CUS10S30 Schottky Barrier Diode Silicon Epitaxial CUS10S30CUS10S30CUS10S30CUS10S30 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications High-Speed Switching 2. 2. Packaging and Internal CircuitPackaging and Internal Circuit 2. 2. Packaging and Internal CircuitPackaging and Internal Circuit 1: Cathode 2: Anode USC 3. 3. 3. 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Note Rating Unit Peak reverse voltage V 30 V RM Reverse voltage V 20 R Average rectified current I (Note 1) 1.0 A O Non-repetitive peak forward surge current I (Note 2) 5 FSM Junction temperature T 125 j Storage temperature T -55 to 125 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board. (25.4 mm 25.4 mm 1.6 mm, Cu Pad: 645 mm2) Note 2: Measured with a 10 ms pulse. Start of commercial production 2013-09 2014-04-07 1 Rev.2.0CUS10S30 4. 4. 4. 4. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage V (1) I = 0.1 A (Pulse test) 0.23 V F F Forward voltage V (2) I = 0.5 A (Pulse test) 0.31 V F F Forward voltage V (3) I = 1 A (Pulse test) 0.37 0.45 V F F Reverse current I V = 30 V (Pulse test) 0.2 0.5 mA R R Total capacitance C V = 0 V, f = 1 MHz 135 pF t R 5. 5. MarkingMarking 5. 5. MarkingMarking Fig. Fig. 5.15.1 MarkingMarking Fig. Fig. 5.15.1 MarkingMarking Marking Code Part Number 8C CUS10S30 6. 6. 6. 6. Usage ConsiderationsUsage ConsiderationsUsage ConsiderationsUsage Considerations Schottky barrier diodes (SBDs) have reverse leakage greater than other types of diodes. This makes SBDs more susceptible to thermal runaway under high-temperature and high-voltage conditions. Thus, both forward and reverse power losses of SBDs should be considered for thermal and safety design. 7. 7. Land Pattern Dimensions (for reference only)Land Pattern Dimensions (for reference only) 7. 7. Land Pattern Dimensions (for reference only)Land Pattern Dimensions (for reference only) Fig. 7.1 Land Pattern Dimensions for Reference Only (Unit: mm) Fig. Fig. Fig. 7.17.17.1 Land Pattern Dimensions for Reference Only (Unit: mm)Land Pattern Dimensions for Reference Only (Unit: mm)Land Pattern Dimensions for Reference Only (Unit: mm) 2014-04-07 2 Rev.2.0