CUS03
TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type
CUS03
Unit: mm
Switching Mode Power Supply Applications
+ 0.2
1.25
0.1
Portable Equipment Battery Applications
+ 0.05
0.13
0.88 0.1 0.03
Forward voltage: V = 0.52 V@I = 0.7 A
FM F
Average forward current: I = 0.7 A
F (AV)
Repetitive peak reverse voltage: V = 40 V
RRM
Suitable for high-density board assembly due to the use of a small
TM
surface-mount package, USFLAT
Absolute Maximum Ratings (Ta = 25C)
0.6 0.1
0.88 0.1
Characteristics Symbol Rating Unit
Repetitive peak reverse voltage V 40 V 0.6 0.1
RRM
0.7
Average forward current I A
F (AV)
(Note 1)
Peak one cycle surge forward current
I 20 (50 Hz) A
FSM
0.78 0.1
(Non-repetitive)
ANODE
CATHODE
Junction temperature T 40 to 150 C
j
0.6 0.1
Storage temperature range T 40 to 150 C
stg
JEDEC
Note 1: Ta = 53C: Device mounted on a glass-epoxy board
Board size: 50 mm 50 mm,
JEITA
Land size: 6 mm 6 mm
TOSHIBA 3-2B1A
Rectangular waveform ( = 180), V = 20 V
R
Note 2: Using continuously under heavy loads (e.g. the application of Weight: 0.004 g (typ.)
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25C)
Characteristics Symbol Test Condition Min Typ. MaxUnit
V I = 0.1 A 0.37
FM (1) FM
Peak forward voltage V
V I = 0.7 A 0.48 0.52
FM (2) FM
I V = 5 V 0.4
RRM (1) RRM
Repetitive peak reverse current A
I V = 40 V 3.0 100
RRM (2) RRM
Junction capacitance C V = 10 V, f = 1.0 MHz 45 pF
j R
Device mounted on a ceramic board
(board size: 50 mm 50 mm)
75
(soldering land: 2 mm 2 mm)
(board thickness: 0.64 mm)
Thermal resistance
R C/W
th (j-a)
(junction to ambient)
Device mounted on a glass-epoxy board
(board size: 50 mm 50 mm)
150
(soldering land: 6 mm 6 mm)
(board thickness: 1.6 mm)
Thermal resistance (junction to lead) R Junction to lead of cathode side 30 C/W
th (j-)
Start of commercial production
2003-11
1 2013-11-01
2.5 0.2
0.6 0.1
1.9 0.1
0 ~ 0.05
0.5 0.1
1.4 0.2 CUS03
Marking
Abbreviation Code Part No.
3 CUS03
Standard Soldering Pad
Unit: mm
0.8
2.0 0.5
1.1 0.8
Handling Precaution
1) Schottky barrier diodes have reverse current characteristics compared to other diodes.
There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage.
Please take forward and reverse loss into consideration during design.
2) The absolute maximum ratings denote the absolute maximum ratings, which are rated values and must not be
exceeded during operation, even for an instant. The following are the general derating methods that we
recommend for designing a circuit using this device.
V : Use this rating with reference to (1) above. V has a temperature coefficient of 0.1%/C. Take
RRM RRM
this temperature coefficient into account when designing a device at low temperature.
I : We recommend that the worst-case current be no greater than 80% of the absolute maximum
F (AV)
rating of
I and T be below 120C. When using this device, please take the margin into consideration
F (AV) j
by using an allowable Ta max-I curve.
F (AV)
I : This rating specifies the non-repetitive peak current. This is only applied for an abnormal
FSM
operation, which seldom occurs during the lifespan of the device.
T : Derate this rating when using a device to ensure high reliability.
j
We recommend that the device be used at T below 120C.
j
3) Thermal resistance between junction and ambient fluctuates depending on the devices mounting condition.
When using a device, design a circuit board and a soldering land size to match the appropriate thermal
resistance value.
4) Refer to the Rectifiers databook for further information.
2 2013-11-01