Silicon Carbide Schottky Diode 650 V, 8 A FFSD0865B-F085 Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, www.onsemi.com temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, V I RRM F faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. 650 V 8.0 A Features Max Junction Temperature 175C Avalanche Rated 33 mJ High Surge Current Capacity Positive Temperature Coefficient 1., 3. Cathode 2. Anode Ease of Paralleling Schottky Diode No Reverse Recovery / No Forward Recovery AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant Applications Automotive HEVEV Onboard Chargers Automotive HEVEV DCDC Converters DPAK3 (TO252, 3 LD) CASE 369AS MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit MARKING DIAGRAM Peak Repetitive Reverse Voltage V 650 V RRM Single Pulse Avalanche Energy (T = 25C, E 33 mJ J AS I = 11.5 A, L = 0.5 mH, V = 50 V) L(pk) Y&Z&3&K Continuous Rectified Forward T < 153 I 8.0 A C F FFS Current D0865B T < 135 11.6 C NonRepetitive Peak Forward T = 25C, I 577 A C FM Surge Current t = 10 s P T = 150C, 538 C t = 10 s P Y = ON Semiconductor Logo &Z = Assembly Plant Code NonRepetitive Forward Surge T = 25C I 42 A C FSM &3 = Numeric Date Code Current (HalfSine Pulse) t = 8.3 ms P &K = Lot Code Power Dissipation T = 25C P 91 W C tot FFSD0865B = Specific Device Code T = 150C 15 C Operating Junction and Storage Temperature T , T 55 to C J stg ORDERING INFORMATION Range +175 See detailed ordering and shipping information on page 2 of Stresses exceeding those listed in the Maximum Ratings table may damage the this data sheet. device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE Parameter Symbol Value Unit Thermal Resistance, JunctiontoCase R 1.64 C/W JC Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: October, 2020 Rev. 1 FFSD0865BF085/DFFSD0865B F085 ELECTRICAL CHARACTERISTICS Symbol Parameter Test Conditions Min Typ Max Unit ON CHARACTERISTICS V Forward Voltage I = 8.0 A, T = 25C 1.39 1.7 V F F J I = 8.0 A, T = 125C 1.55 2.0 F J I = 8.0 A, T = 175C 1.71 2.4 F J I Reverse Current V = 650 V, T = 25C 0.5 40 A R R J V = 650 V, T = 125C 1.0 80 R J V = 650 V, T = 175C 2.0 160 R J CHARGES, CAPACITANCES & GATE RESISTANCE Q Total Capacitive Charge V = 400 V 22 nC C C C V = 1 V, f = 100 kHz 336 pF tot R V = 200 V, f = 100 kHz 39 R V = 400 V, f = 100 kHz 30 R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. PART MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FFSD0865BF085 FFSD0865B DPAK Tape & Reel 330 mm 16 mm 2500 units For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2