NRVTSA4100E Trench-Based Schottky Rectifier, Low Leakage Features Fine Lithography Trenchbased Schottky Technology for Very Low Forward Voltage and Low Leakage www.onsemi.com Fast Switching with Exceptional Temperature Stability Low Power Loss and Lower Operating Temperature SCHOTTKY BARRIER Higher Efficiency for Achieving Regulatory Compliance RECTIFIERS High Surge Capability 4 AMPERES NRV Prefix for Automotive and Other Applications Requiring 100 VOLTS Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable MARKING These are PbFree and HalideFree Devices DIAGRAMS Typical Applications SMA Switching Power Supplies including Wireless, Smartphone and TE41 CASE 403D AYWW Notebook Adapters STYLE 1 High Frequency and DCDC Converters Freewheeling and ORing diodes TE41 = Specific Device Code Reverse Battery Protection A = Assembly Location Y = Year Instrumentation WW = Work Week LED Lighting = PbFree Package (Note: Microdot may be in either location) Mechanical Characteristics: Case: Epoxy, Molded Epoxy Meets Flammability Rating UL 940 0.125 in. ORDERING INFORMATION Lead Finish: 100% Matte Sn (Tin) Device Package Shipping Lead and Mounting SurfaceTemperature for Soldering Purposes: 260C Max. for 10 Seconds NRVTSA4100ET3G SMA 5000 / (PbFree) Tape & Reel Device Meets MSL 1 Requirements For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: October, 2018 Rev. 1 NRVTSA4100E/DNRVTSA4100E MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V 100 R Average Rectified Forward Current I 4.0 A F(AV) (T = 142C) L Peak Repetitive Forward Current, I 8.0 A FRM (Square Wave, 20 kHz, T = 135C) L NonRepetitive Peak Surge Current I 150 A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage Temperature Range T 65 to +175 C stg Operating Junction Temperature T 55 to +175 C J ESD Rating (Human Body Model) 1B ESD Rating (Machine Model) M3 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Typ Max Unit Thermal Resistance, JunctiontoLead, Steady State R 16.2 C/W JL 2 (Assumes 600 mm 1 oz. copper bond pad, on a FR4 board) Thermal Resistance, JunctiontoAmbient, Steady State R 90 C/W JA 2 (Assumes 600 mm 1 oz. copper bond pad, on a FR4 board) ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage (Note 1) v V F (i = 1.0 Amps, T = 25C) 0.45 F J (i = 4.0 Amps, T = 25C) 0.61 0.68 F J (i = 1.0 Amps, T = 125C) 0.36 F J (i = 4.0 Amps, T = 125C) 0.53 0.59 F J Reverse Current (Note 1) i R (Rated dc Voltage, T = 25C) 3.5 29 A J (Rated dc Voltage, T = 125C) 2.0 5.0 mA J Diode Capacitance C pF d (Rated dc Voltage, T = 25C, f = 1 MHz) 55 J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. www.onsemi.com 2