NRVTS5100ETFSWFTAG ON Semiconductor

NRVTS5100ETFS Trench Surface Mount Schottky Rectifier This 8FL flat lead Trench Schottky rectifier provides fast switching performance with soft recovery in a compact thermally efficient package. Its compact footprint makes it ideally suited to www.onsemi.com portable and automotive applications where board space is at a premium. Its low profile makes it a good option for flat panel display and other applications with limited vertical clearance. The device offers low leakage over temperature making it a good match for TRENCH SCHOTTKY applications requiring low quiescent current. RECTIFIER 5.0 AMPERE 100 VOLTS Features Fast Soft Switching for Reduced EMI and Higher Efficiency Low Profile Maximum Height of 1.1 mm 2 Small Footprint Footprint Area of 13.5 mm 1 NRV Prefix for Automotive and Other Applications Requiring WDFN8 Unique Site and Control Change Requirements AECQ101 ( 8FL) Qualified and PPAP Capable CASE 511AB FLAT LEAD These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant MARKING DIAGRAM Mechanical Characteristics: Case: Molded Epoxy 1 A C Epoxy Meets UL 94 V0 0.125 in T510 A C Weight: 95 mg (Approximately) AYWW A C NC C Lead and Mounting Surface Temperature for Soldering Purposes: 260C Maximum for 10 Seconds MSL 1 T510 = Specific Device Code A = Assembly Location Applications Y = Year WW = Work Week Switching Power Supplies including Miniadapters and Displays = PbFree Package Instrumentation (Note: Microdot may be in either location) Engine Control Recirculation Diodes Freewheeling Diode Where Space is at a Premium ORDERING INFORMATION Device Package Shipping NRVTS5100ETFSTAG WDFN8 1500 / Tape (PbFree) & Reel NRVTS5100ETFSWFTAG NRVTS5100ETFSTWG WDFN8 5000 / Tape (PbFree) & Reel NRVTS5100ETFSWFTWG For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: June, 2018 Rev. 0 NRVTS5100ETFS/DNRVTS5100ETFS MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 100 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A O (T = TBDC) 5.0 L Peak Repetitive Forward Current I A FRM (Rated V , Square Wave, 20 kHz) T = 161C 5.6 R L NonRepetitive Peak Surge Current I A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) 80 Storage Temperature Range T 65 to +175 C stg Operating Junction Temperature T 65 to +175 C J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, JunctiontoTab (Note 1) 3.3 C/W JCT Thermal Resistance, JunctiontoAmbient (Note 1) R 50.2 C/W JA 1. 1 inch square pad size (1 0.5 inch) for each lead on FR4 board. ELECTRICAL CHARACTERISTICS Characteristic Symbol Typ Max Unit Instantaneous Forward Voltage (Note 1) v V F (i = 5 Amps, T = 25C) 0.95 1.00 F J (i = 5 Amps, T = 125C) 0.70 0.80 F J Reverse Current (Note 1) i R (Rated dc Voltage, T = 25C) 1.50 50 A J (Rated dc Voltage, T = 125C) 1.29 7.5 mA J Diode Capacitance C pF d (Rated dc Voltage, T = 25C, f = 1 MHz) 26.5 J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. www.onsemi.com 2