VS-15CTQ035-M3, VS-15CTQ040-M3, VS-15CTQ045-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 7.5 A FEATURES Base 2 common 150 C T operation J cathode Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength Anode 2 Anode and moisture resistance 13Common 3L TO-220AB cathode Guard ring for enhanced ruggedness and long term reliability Designed and qualified according to JEDEC -JESD 47 PRIMARY CHARACTERISTICS Material categorization: for definitions of compliance I 2 x 7.5 A F(AV) please see www.vishay.com/doc 99912 V 35 V, 40 V, 45 V R DESCRIPTION V at I 0.51 V F F The VS-15CTQ... center tap Schottky rectifier series has I max. 32 mA at 125 C RM been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows T max. 150 C J for reliable operation up to 150 C junction temperature. E 10 mJ AS Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery Package 3L TO-220AB protection. Circuit configuration Common cathode MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUESUNITS I Rectangular waveform 15 A F(AV) V Range 35 to 45 V RRM I t = 5 s sine 810 A FSM p V 7.5 A , T = 125 C (per leg) 0.51 V F pk J T Range -55 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOLVS-15CTQ035-M3VS-15CTQ040-M3 VS-15CTQ045-M3 UNITS Maximum DC reverse voltage V R 35 40 45 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I 50 % duty cycle at T = 123 C, rectangular waveform 15 A F(AV) C See fig. 5 Maximum peak one cycle 5 s sine or 3 s rect. pulse Following any rated load 810 non-repetitive surge current per leg I condition and with rated A FSM V applied 10 ms sine or 6 ms rect. pulse 145 See fig. 7 RRM Non-repetitive avalanche energy per leg E T = 25 C, I = 1.20 A, L = 11.10 mH 10 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 1.5 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 17-Aug-17 Document Number: 96271 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-15CTQ035-M3, VS-15CTQ040-M3, VS-15CTQ045-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 7.5 A 0.55 T = 25 C J 15 A 0.70 Maximum forward voltage drop per leg (1) V V FM See fig. 1 7.5 A 0.51 T = 125 C J 15 A 0.65 T = 25 C 0.8 Maximum reverse leakage current per leg J (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 32 J Maximum junction capacitance per leg C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C 400 pF T R DC Typical series inductance per leg L Measured lead to lead 5 mm from package body 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T - 55 to 150 C J Stg temperature range Maximum thermal resistance, DC operation 3.50 junction to case per leg See fig. 4 R thJC Maximum thermal resistance, DC operation 1.75 C/W junction to case per package Typical thermal resistance, R Mounting surface, smooth and greased 0.50 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) 15CTQ035 Marking device Case style 3L TO-220AB 15CTQ040 15CTQ045 Revision: 17-Aug-17 Document Number: 96271 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000