VS-15ETH03-N3 Vishay

VS-15ETH03PbF, VS-15ETH03-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 15 A FRED Pt FEATURES Base Hyperfast recovery time cathode 2 Low forward voltage drop 175 C operating junction temperature Low leakage current Designed and qualified according to 1 3 JEDEC -JESD 47 Cathode Anode TO-220AC Available Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS PRODUCT SUMMARY 300 V series are the state of the art hyperfast recovery Package TO-220AC rectifiers designed with optimized performance of forward I 15 A F(AV) voltage drop and hyperfast recovery time. V 300 V R The planar structure and the platinum doped life time control V at I 0.85 V guarantee the best overall performance, ruggedness and F F reliability characteristics. t typ. See Recovery table rr These devices are intended for use in the output rectification T max. 175 C J stage of SMPS, UPS, DC/DC converters as well as Diode variation Single die freewheeling diodes in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Repetitive peak reverse voltage V 300 V RRM Average rectified forward current I T = 142 C 15 F(AV) C A Non-repetitive peak surge current I T = 25 C 140 FSM J Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 300 - - R blocking voltage V R V I = 15 A - 1.05 1.25 F Forward voltage V F I = 15 A, T = 125 C - 0.85 1.00 F J V = V rated - 0.05 40 R R Reverse leakage current I A R T = 125 C, V = V rated - 12 400 J R R Junction capacitance C V = 300 V - 45 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8 - nH S Revision: 09-Jul-15 Document Number: 94000 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-15ETH03PbF, VS-15ETH03-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 50 A/s, V = 30 V - - 40 F F R Reverse recovery time t T = 25 C -32 - ns rr J T = 125 C - 45 - J I = 15 A F T = 25 C - 2.4 - J Peak recovery current I dI /dt = - 200 A/s A RRM F T = 125 C - 6.1 - J V = 200 V R T = 25 C - 38 - J Reverse recovery charge Q nC rr T = 125 C - 137 - J THERMAL - MECHANICAL SPECIFICATIONS (T = 25 C unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and T , T -65 - 175 C J Stg storage temperature range Thermal resistance, R - 1.02 2.0 thJC junction to case Thermal resistance, R Typical socket mount - - 70 C/W thJA junction to ambient Thermal resistance, Mounting surface, flat, smooth R -0.2 - thCS case to heatsink and greased -2.0 - g Weight -0.07- oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) Marking device Case style TO-220AC 15ETH03 Revision: 09-Jul-15 Document Number: 94000 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000