VS-15ETH06PbF, VS-15ETH06-N3, VS-15ETH06FPPbF, VS-15ETH06FP-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 15 A Fred Pt FEATURES Hyperfast recovery time Low forward voltage drop 2 2 175 C operating junction temperature 3 3 Low leakage current 1 1 Single die center tap module TO-220AC TO-220 FULL-PAK Base Fully isolated package (V = 2500 V ) INS RMS cathode 2 UL E78996 approved Available 2 Designed and qualified according to JEDEC -JESD 47 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 1 1 3 3 Cathode Cathode Anode Anode DESCRIPTION / APPLICATIONS VS-15ETH06PbF VS-15ETH06FPPbF VS-15ETH06-N3 VS-15ETH06FP-N3 State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. PRODUCT SUMMARY The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and Package TO-220AC, TO-220FP reliability characteristics. I 15 A F(AV) These devices are intended for use in PFC boost stage in the V 600 V R AC/DC section of SMPS, inverters or as freewheeling V at I 1.3 V diodes. F F Their extremely optimized stored charge and low recovery t typ. 22 ns rr current minimize the switching losses and reduce over T max. 175 C J dissipation in the switching element and snubbers. Diode variation Single die ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Peak repetitive reverse voltage V 600 V RRM T = 140 C C Average rectified forward current I 15 F(AV) T = 80 C (FULL-PAK) C T = 25 C 120 A J Non-repetitive peak surge current I FSM T = 25 C (FULL-PAK) 180 J Peak repetitive forward current I 30 FM Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage V , V I = 100 A 600 - - BR R R I = 15 A - 1.8 2.2 V F Forward voltage V F I = 15 A, T = 150 C - 1.3 1.6 F J V = V rated - 0.2 50 R R Reverse leakage current I A R T = 150 C, V = V rated - 30 500 J R R Junction capacitance C V = 600 V - 20 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S Revision: 13-May-16 Document Number: 94002 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-15ETH06PbF, VS-15ETH06-N3, VS-15ETH06FPPbF, VS-15ETH06FP-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) C PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 100 A/s, V = 30 V - 22 30 F F R I = 15 A, dI /dt = 100 A/s, V = 30 V - 28 35 F F R Reverse recovery time t ns rr T = 25 C -29 - J T = 125 C - 75 - J I = 15 A F T = 25 C - 3.5 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 7 - J V = 390 V R T = 25 C - 57 - J Reverse recovery charge Q nC rr T = 125 C - 300 - J Reverse recovery time t -51 - ns rr I = 15 A F Peak recovery current I T = 125 C dI /dt = 800 A/s -20 - A RRM J F V = 390 V R Reverse recovery charge Q - 580 - nC rr THERMAL MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -65 - 175 C J Stg temperature range -1.0 1.3 Thermal resistance, R thJC junction to case (FULL-PAK) - 3.0 3.5 Thermal resistance, C/W R Typical socket mount - - 70 thJA junction to ambient per leg Thermal resistance, Mounting surface, flat, smooth R -0.5 - thCS case to heatsink and greased -2.0 - g Weight -0.07- oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) Case style TO-220AC 15ETH06 Marking device Case style TO-220 FULL-PAK 15ETH06FP 100 1000 T = 175 C J 100 T = 150 C J 10 T = 125 C J T = 175 C J 1 T = 150 C T = 100 C J J 10 T = 25 C J 0.1 T = 25 C 0.01 J 0.001 1 0 0.5 1.0 1.5 2.0 2.5 3.0 0 100 200 300 400 500 600 V - Forward Voltage Drop (V) V - Reverse Voltage (V) F R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 13-May-16 Document Number: 94002 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward F Current (A) I - Reverse Current (A) R