VS-16CTU04HN3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 16 A FRED Pt FEATURES Base 4 common Ultrafast recovery time cathode 4 Low forward voltage drop 175 C operating junction temperature Low leakage current 3 AEC-Q101 qualified, meets JESD 201 class 2 2 2 1 whisker test Common TO-220AB cathode Anode Anode Material categorization: 13 for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS PRIMARY CHARACTERISTICS FRED Pt series are the state of the art ultrafast recovery I 2 x 8 A F(AV) rectifiers specifically designed with optimized performance of forward voltage drop and ultrafast recovery time. V 400 V R The planar structure and the platinum doped life time V at I 0.94 V F F control, guarantee the best overall performance, t (typ.) 24 ns rr ruggedness and reliability characteristics. T max. 175 C These devices are intended for use in the output J rectification stage of SMPS, UPS, DC/DC converters as Package TO-220AB well as freewheeling diode in low voltage inverters and Circuit configuration Common cathode chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Peak repetitive reverse voltage V 400 V RRM per leg 8 Average rectified forward current I F(AV) total device T = 155 C, rated V 16 C R A Non-repetitive peak surge current I T = 25 C 100 FSM C Peak repetitive forward current I T = 155 C, rated V , square wave, 20 kHz 16 FRM C R Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS PER LEG (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 400 - - R blocking voltage V R V I = 8 A - 1.19 1.3 F Forward voltage V F I = 8 A, T = 150 C - 0.94 1.0 F J V = V rated - 0.2 10 R R Reverse leakage current I A R T = 150 C, V = V rated - 20 500 J R R Junction capacitance C V = 400 V - 14 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S Revision: 21-Sep-2018 Document Number: 94720 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-16CTU04HN3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS PER LEG (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 50 A/A, V = 30 V - 35 - F F R I = 1.0 A, dI /dt = 100 A/A, V = 30 V - 24 - F F R Reverse recovery time t ns rr T = 25 C -43 - J T = 125 C - 67 - J I = 8 A F T = 25 C - 2.8 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 6.3 - J V = 200 V R T = 25 C - 60 - J Reverse recovery charge Q nC rr T = 125 C - 210 - J THERMAL MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -65 - 175 C J Stg temperature range per leg -3.6 4 Thermal resistance, R thJC junction to case per device - 1.8 2 Thermal resistance, C/W R Typical socket mount - - 50 thJA junction to ambient Thermal resistance, Mounting surface, flat, smooth, R -0.5 - thCS case to heatsink and greased -2.0 - g Weight -0.07 - oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) Marking device Case style TO-220AB 16CTU04H Revision: 21-Sep-2018 Document Number: 94720 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000