STPSC10H12B-TR1 STMicroelectronics

STPSC10H12 Datasheet 1200 V power Schottky silicon carbide diode A K Features K K No or negligible reverse recovery A Switching behavior independent of temperature K A Robust high voltage periphery DPAK HV 2L K Operating from -40 C to 175 C TO-220AC K Low V K F ECOPACK 2 compliant A NC A DPAK DO-247 LL K Description The SiC diode, available in TO-220AC, DPAK HV, DPAK and DO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low V F Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases. Product status STPSC10H12 Table 1. Device summary Symbol Value I 10 A F(AV) V 1200 V RRM T (max) 175 C j V (typ) 1.35 V F DS11566 - Rev 5 - April 2018 www.st.com For further information contact your local STMicroelectronics sales office.STPSC10H12 Characteristics 1 Characteristics Table 2. Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage (T = -40 C to +175 C) 1200 V RRM j I Forward rms current 25 A F(RMS) (1) TO-220AC, DPAK HV 2L, DPAK, T = 155 C , DC current C I Average forward current 10 A F(AV) (1) DO-247 LL, T = 150 C , DC current C TO-220AC, DPAK HV 2L, DPAK, T = 155 C, T = 175 C, = 0.1 38 C j Repetitive peak forward I A FRM current DO-247 LL, T = 150 C, T = 175 C, = 0.1 42 C j T = 25 C 71 C t = 10 ms sinusoidal p Surge non repetitive I T = 150 C 60 A FSM C forward current t = 10 s square T = 25 C 420 p C T Storage temperature range -65 to + C stg 175 T Operating junction temperature range -40 to + C j 175 1. Value based on Rth(j-c) max. Table 3. Thermal parameters Symbol Parameter Typ. Max. Unit TO-220AC, DPAK HV 2L, DPAK 0.65 0.9 R Junction to case C/W th(j-c) DO-247 LL 0.70 0.95 Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 5 60 j (1) I V = V Reverse leakage current A R R RRM T = 150 C - 30 400 j T = 25 C - 1.35 1.50 j (2) V I = 10 A Forward voltage drop V F F T = 150 C - 1.75 2.25 j 1. Pulse test: t = 10 ms, < 2% p 2. Pulse test: t = 500 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 1.03 x I + 0.122 I F(AV) F (RMS) DS11566 - Rev 5 page 2/18