VS-15MQ040NPbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 1.5 A FEATURES Surface mountable Extremely low forward voltage Compact size Cathode Anode Improved reverse blocking voltage capability relative to other similar size Schottky Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C DO-214AC (SMA) Designed and qualified for industrial level Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS Switching power supplies PRODUCT SUMMARY Meter protection Package DO-214AC (SMA) Reverse protection for power input to PC board circuits I 1.5 A F(AV) Battery isolation and charging V 40 V R Low threshold voltage diode V at I 0.43 V F F Freewheeling or by-pass diode I 20 mA at 125 C RM T max. 150 C Low voltage clamp J Diode variation Single die DESCRIPTION E 6.0 mJ AS The VS-15MQ040NPbF Schottky rectifier is designed to be used for low power applications where a reverse voltage of 40 V is encountered and surface mountable is required. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 1.5 A F(AV) V 40 V RRM I t = 5 s sine 330 A FSM p V 2 A , T = 125 C 0.43 V F pk J T Range -40 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-15MQ040NPbF UNITS Maximum DC reverse voltage V R 40 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 50 % duty cycle at T = 105 C, rectangular waveform L I 2.1 F(AV) 2 On PC board 9 mm island (0.013 mm thick copper pad area) Maximum average forward current A See fig. 4 50 % duty cycle at T = 114 C, rectangular waveform L I 1.5 F(AV) 2 On PC board 9 mm island (0.013 mm thick copper pad area) Maximum peak one cycle 5 s sine or 3 s rect. pulse Following any rated load 330 non-repetitive surge current I condition and with rated A FSM 10 ms sine or 6 ms rect. pulse 140 See fig. 6 V applied RRM Non-repetitive avalanche energy E T = 25 C, I = 1 A, L = 12 mH 6.0 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 1.0 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 16-Feb-15 Document Number: 94141 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-15MQ040NPbF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 1 A 0.42 T = 25 C J 2 A 0.49 Maximum forward voltage drop (1) V V FM See fig. 1 1 A 0.34 T = 125 C J 2 A 0.43 T = 25 C 0.5 J Maximum reverse leakage current (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 20 J Threshold voltage V 0.26 V F(TO) T = T maximum J J Forward slope resistance r 64.6 m t Typical junction capacitance C V = 10 V , T = 25 C, test signal = 1 MHz 134 pF T R DC J Typical series inductance L Measured lead to lead 5 mm from package body 2.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage (1) T , T -40 to +150 C J Stg temperature range Maximum thermal resistance, R DC operation 80 C/W thJA junction to ambient 0.07 g Approximate weight 0.002 oz. Marking device Case style SMA (similar D-64) XF Note dP tot 1 (1) ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT R J thJA Revision: 16-Feb-15 Document Number: 94141 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000