X-On Electronics has gained recognition as a prominent supplier of STPSA92 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. STPSA92 Bipolar Transistors - BJT are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

STPSA92 STMicroelectronics

STPSA92 electronic component of STMicroelectronics
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Part No.STPSA92
Manufacturer: STMicroelectronics
Category: Bipolar Transistors - BJT
Description: Trans GP BJT PNP 300V 0.5A 3-Pin TO-92 Bag
Datasheet: STPSA92 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
334: USD 0.0209 ea
Line Total: USD 6.98 
Availability - 0
MOQ: 334  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1
Multiples : 1
1 : USD 0.581
10 : USD 0.3858
100 : USD 0.1947
500 : USD 0.1589
1000 : USD 0.1179

0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 334
Multiples : 1
334 : USD 0.0209

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STPSA92 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STPSA92 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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STPSA92 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment STPSA92 PSA92 TO-92 / Bulk STPSA92-AP PSA92 TO-92 / Ammopack SILICON EPITAXIAL PLANAR PNP HIGH VOLTAGE TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY THE NPN COMPLEMENTARY TYPE IS STPSA42 TO-92 TO-92 APPLICATIONS Bulk Ammopack VIDEO AMPLIFIER CIRCUITS (RGB CATHODE CURRENT CONTROL) TELEPHONE WIRELINE INTERFACE (HOOK SWITCHES, DIALER CIRCUITS) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Base Voltage (I = 0) -300 V CBO E V Collector-Emitter Voltage (I = 0) -300 V CEO B V Emitter-Base Voltage (I = 0) -5 V EBO C I Collector Current -0.5 A C I Collector Peak Current (t < 5 ms) -0.6 A CM p o P Total Dissipation at T = 25 C 625 mW tot C o T Storage Temperature -65 to 150 C stg o T Max. Operating Junction Temperature 150 C j 1/5 February 2003 Obsolete Product(s) - Obsolete Product(s)STPSA92 THERMAL DATA o R Thermal Resistance Junction-Ambient Max 200 C/W thj-amb o R Thermal Resistance Junction-Case Max 83.3 C/W thj-case o ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off V = -200 V -100 nA CBO CB Current (I = 0) E V Collector-Base -300 V (BR)CBO I = -100 A C Breakdown Voltage (I = 0) E V * Collector-Emitter I = -1 mA -300 V (BR)CEO C Breakdown Voltage (I = 0) B V Emitter-Base I = -100 A -5 V (BR)EBO E Breakdown Voltage (I = 0) C V * Collector-Emitter I = -20 mA I = -2 mA -0.5 V CE(sat) C B Saturation Voltage V * Base-Emitter I = -20 mA I = -2 mA -0.9 V BE(sat) C B Saturation Voltage h * DC Current Gain I = -1 mA V = -10 V 25 FE C CE I = -10 mA V = -10 V 40 C CE I = -30 mA V = -10 V 40 C CE f Transition Frequency I = -10mA V = -20 V f = 50 MHz 50 MHz T C CE C Collector-Emitter V = -20 V f = 1 MHz 50 pF CEO CE Capacitance * Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 2/5 Obsolete Product(s) - Obsolete Product(s)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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