STPS60L30CW STMicroelectronics

STPS60L30CW LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS A1 I 2x30A F(AV) K V 30 V RRM A2 Tj (max) 150 C V (max) 0.38 V F FEATURES AND BENEFITS n VERY SMALL CONDUCTION LOSSES n NEGLIGIBLE SWITCHING LOSSES A2 n EXTREMELY FAST SWITCHING K n LOW FORWARD VOLTAGE DROP A1 n LOW THERMAL RESISTANCE n AVALANCHE CAPABILITY SPECIFIED TO247 DESCRIPTION Dual center tap Schottky rectifier suited for Switch Mode Power Supply and high frequency DC to DC converters. Packaged in TO247, this device is intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter Value Unit V 30 V RRM Repetitive peak reverse voltage I 50 A F(RMS) RMS forward current I 30 A F(AV) Average forward current Tc = 130C Per diode 60 = 0.5 Per device I 600 A FSM Surge non repetitive forward current tp = 10 ms Sinusoidal I 2A RRM Peak repetitive reverse current tp=2sF= 1kHz square P 11000 W ARM Repetitive peak avalanche power tp = 1s Tj = 25C T - 65 to + 150 C stg Storage temperature range Tj 150 C Maximum operating junction temperature * dV/dt 10000 V/s Critical rate of rise reverse voltage dPtot 1 *: < thermal runaway condition for a diode on its own heatsink dTj Rth()j - a July 2003 - Ed: 3A 1/4STPS60L30CW THERMAL RESISTANCE Symbol Parameter Value Unit R Per diode 0.8 C/W th (j-c) Junction to case Total 0.45 R Coupling 0.1 C/W th (c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x R (Per diode) + P(diode 2) x R th(j-c) th(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter Tests Conditions Min. Typ. Max. Unit I * 4mA R Reverse leakage Tj=25CV =V R RRM current 250 500 mA Tj = 125C V * 0.46 V F Forward voltage drop Tj = 25CI =30A F 0.33 0.38 Tj = 125CI =30A F 0.55 Tj=25CI =60A F 0.45 0.5 Tj = 125CI =60A F Pulse test : * tp = 380 s, <2% To evaluate the conduction losses use the following equation : 2 P = 0.26x I + 0.004 I F(AV) F (RMS) Fig. 1: Average forward power dissipation versus Fig. 2: Average forward current versus ambient temperature (=0.5) (per diode). average forward current (per diode). IF(av)(A) PF(av)(W) 35 18 Rth(j-a)=Rth(j-c) =0.5 =1 16 =0.2 30 14 =0.1 25 12 =0.05 20 10 Rth(j-a)=15C/W 8 15 6 T T 10 4 5 2 tp =tp/T tp IF(av) (A) =tp/T Tamb(C) 0 0 0 5 10 15 20 25 30 35 40 0 25 50 75 100 125 150 Fig. 3: Normalized avalanche power derating Fig. 4: Normalized avalanche power derating versus pulse duration. versus junction temperature. P(ARMtp) P(t) ARM p P (1s) ARM P (25C) ARM 1 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 T (C) j tp(s) 0.001 0 0 25 50 75 100 125 150 0.01 0.1 1 10 100 1000 2/4