STPS61L45CT STMicroelectronics

STPS61L45C Power Schottky rectifier Features A1 K High current capability A2 Avalanche rated K Low forward voltage drop current High frequency operation A2 A2 Description K K A1 A1 Dual center tap Schottky rectifier suited for high TO-220AB TO-247 frequency switch mode power supplies. STPS61L45CT STPS61L45CW Packaged in TO-247 and TO-220AB, this device provides desktop SMPS designers with a low forward voltage drop device, and reduced leakage Table 1. Device summary current, with the objective of making the application compliant with environmental care Symbol Value standards, or suitable for 80+ requirements. I 2 x 30 A F(AV) V 45 V RRM T (max) 150 C j V (typ) 0.45 V F July 2011 Doc ID 14192 Rev 2 1/8 www.st.com 8Characteristics STPS61L45C 1 Characteristics Table 2. Absolute ratings (limiting values per diode at 25 C unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 45 V RRM I Forward rms current 60 A F(RMS) T = 120 C Per diode 30 c I Average forward current = 0.5 A F(AV) T = 115 C Per device 60 c I Surge non repetitive forward current t = 10 ms sinusoidal 500 A FSM p P Repetitive peak avalanche power t = 1 s Tj = 25 C 10000 W ARM p T Storage temperature range -65 to + 175 C stg (1) T Maximum operating junction temperature 150 C j 1 dPtot < 1. condition to avoid runaway for a diode on its own heatsink Rth(j-a) dTj Table 3. Thermal resistances Symbol Parameter Value Unit Per diode 1.3 R Junction to case C/W th(j-c) Total 0.75 R Coupling 0.2 C/W th(c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x R (Per diode) + P(diode 2) x R . th(j-c) th(c) Table 4. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C 1.5 j (1) I Reverse leakage current V = V mA R R RRM T = 125 C 190 400 j T = 25 C 0.35 j I = 5 A F T = 125 C 0.23 j T = 25 C 0.43 0.50 j (2) V Forward voltage drop I = 15 A V F F T = 125 C 0.34 0.40 j T = 25 C 0.50 0.56 j I = 30 A F T = 125 C 0.45 0.51 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 0.3 x I + 0.007 x I F(AV) F (RMS) 2/8 Doc ID 14192 Rev 2