STPS61L60CT STMicroelectronics

STPS61L60C Power Schottky rectifier Features A1 High current capability K Avalanche rated A2 Low forward voltage drop current K High frequency operation Description This dual center tap schottky rectifier is suited for A2 A2 K high frequency switch mode power supplies. K A1 A1 Packaged in TO-247 and TO-220AB, this device TO-220AB TO-247 provides desktop SMPS designers with a low STPS61L60CT STPS61L60CW forward voltage drop device, and reduced leakage current, with the objective of making the application compliant with environmental care standards, or suitable for 80+ requirements. (a) Figure 1. Electrical characteristics Table 1. Device summary I I 2 x 30 A V F(AV)Forwar V 60 V I RRM 2 x I O X T (max) 150 C j V (typ) 0.560 V IF F I O X VRRM V V AR R V I R V V V V To F(Io) F F(2xIo)Revers I AR a. V and I must respect the reverse safe ARM ARM operating area defined in Figure 12 V and I are AR AR pulse measurements (t < 1 s). V , I , V and V , p R R RRM F are static characteristics June 2010 Doc ID 15641 Rev 2 1/9 www.st.com 9 Characteristics STPS61L60C 1 Characteristics Table 2. Absolute ratings (limiting values per diode at 25 C unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 60 V RRM I Forward rms voltage 50 A F(RMS) T = 125 C Per diode 30 c I Average forward current = 0.5 A F(AV) T = 120 C Per device 60 c T0-247 530 I Surge non repetitive forward current t = 10 ms sinusoidal A FSM p T0-220AB 400 P Repetitive peak avalanche power t = 1 s Tj = 25 C 11500 W ARM p Maximum repetitive peak avalanche (1) V t < 1 s T < 150 C, I < 43 A 80 V ARM p j AR voltage Maximum single pulse peak (1) V t < 1 s T < 150 C, I < 43 A 80 V ASM p j AR avalanche voltage T Storage temperature range -65 to + 175 C stg (2) T Maximum operating junction temperature 150 C j 1. Refer to Figure 12 1 dPtot < 2. condition to avoid thermal runaway for a diode on its own heatsink Rth(j-a) dTj Table 3. Thermal resistances Symbol Parameter Value Unit Per diode 0.95 TO-247 Total 0.6 R Junction to case th(j-c) Per diode 1.1 TO-220AB C/W Total 0.7 TO-247 0.25 R Coupling th(c) TO-220AB 0.3 When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x R (Per diode) + P(diode 2) x R . th(j-c) th(c) 2/9 Doc ID 15641 Rev 2