X-On Electronics has gained recognition as a prominent supplier of STPS640CBY-TR Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. STPS640CBY-TR Schottky Diodes & Rectifiers are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

STPS640CBY-TR STMicroelectronics

STPS640CBY-TR electronic component of STMicroelectronics
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Part No.STPS640CBY-TR
Manufacturer: STMicroelectronics
Category: Schottky Diodes & Rectifiers
Description: STMicroelectronics Schottky Diodes & Rectifiers
Datasheet: STPS640CBY-TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4104 ea
Line Total: USD 0.41 
Availability - 46
Ship by Fri. 29 Nov to Wed. 04 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
46
Ship by Fri. 29 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.4104
10 : USD 0.4009
30 : USD 0.395
100 : USD 0.3893

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Qualification
Packaging
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STPS640CBY-TR from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STPS640CBY-TR and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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STPS640C-Y Automotive power Schottky rectifier Datasheet production data Description A1 K This dual Schottky rectifier is designed for switch A2 mode power supplies and other power converters. K This device is intended for use in low and medium voltage operation, and in particular high frequency circuits where low switching losses are required (free wheeling and polarity protection) in automotive applications. A2 Table 1. Device summary A1 Symbol Value DPAK I 2 x 3 A STPS640CBY-TR F(AV) V 40 V RRM Features T 150 C j V 0.50 V Low forward voltage drop F (Typ) Very small conduction losses Negligible switching losses Extremely fast switching Low thermal resistance AEC-Q101 qualified. December 2013 DocID025068 Rev 2 1/8 This is information on a product in full production. www.st.comCharacteristics STPS640C-Y 1 Characteristics Table 2. Absolute ratings (limiting values, per diode) Symbol Parameter Value Unit V Repetitive peak reverse voltage 40 V RRM I Forward rms current 6 A F(RMS) per diode 3 I Average forward current, = 0.5, T = 135 C A F(AV) c per device 6 I Surge non repetitive forward current t = 10 ms sinusoidal, T = 25 C 75 A FSM p c I Peak repetitive reverse current t = 2 s, F = 1kHz 1 A RRM p P Repetitive peak avalanche power t = 1 s, T = 25 C 1300 W ARM p c T Storage temperature range -65 to +150 C stg T Operating junction temperature -40 to +150 C j Table 3. Thermal parameters Symbol Parameter Value Unit per diode 5.5 R Junction to case th(j-c) per device 3 C/W R coupling 0.5 th(c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x R (Per diode) + P(diode 2) x R th(j-c) th(c) Table 4. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ Max. Unit T = 25 C - - 100 A j (1) I Reverse leakage current V = V R R RRM T = 125 C - 2 10 mA j T = 25 C - - 0.63 j I = 3 A F T = 125 C - 0.50 0.57 j (2) V Forward voltage drop V F T = 25 C - - 0.84 j I = 6 A F T = 125 C - 0.67 0.72 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 0.42 x I + 0.050 x I F(AV) F (RMS) 2/8 DocID025068 Rev 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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