STPS660DDJFY-TR STMicroelectronics

STPS660D-Y Automotive power Schottky rectifier Datasheet - production data A1 K1 Description A2 K2 Dual chip Schottky rectifiers suited to automotive application, typically engine control units. TM Packaged in PowerFLAT 5x6 wettable flanks, this device is especially intended for surface mounting and used in high frequency converters, free-wheeling and reverse polarity protection applications. Table 1: Device summary Symbol Value IF(AV) 2 x 3 A VRRM 60 V Tj (max.) 175 C V (typ.) 0.49 V F Features AEC-Q101 qualified Negligible switching losses High junction temperature capability Low leakage current Good trade-off between leakage current and forward voltage drop Avalanche specification ECOPACK 2 compliant component PPAP capable Dual Island package Wettable flanks for automatic visual inspection October 2016 DocID029562 Rev 1 1/9 www.st.com This is information on a product in full production. Characteristics STPS660D-Y 1 Characteristics Table 2: Absolute ratings (limiting values per diode at 25 C, unless otherwise specified) Uni Symbol Parameter Value t VRRM Repetitive peak reverse voltage Tj = -40 C to +175 C 60 V I Forward rms current PowerFLAT 5x6 dual Island 10 A F(RMS) IF(AV) Average forward current Tc = 160 C, = 0.5 square pulse 3.5 A t = 10 ms sinusoidal 65 p IFSM Surge non repetitive forward current A tp = 8.3 ms sinusoidal 68 P Repetitive peak avalanche power 140 W ARM Tj = 125 C, tp = 10 s Tstg Storage temperature range -65 to +175 C (1) T Maximum operating junction temperature -40 to +175 C j Notes: (1) (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Table 3: Thermal resistance parameters Symbol Parameter Maximum Unit Per diode 5 Rth(j-c) Junction to case Total 3 C/W Coupling 1 Table 4: Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit Tj = 25 C - 150 A (1) I Reverse leakage current V = 60 V R R Tj = 125 C - 20 30 mA Tj = 25 C - 0.61 I = 3 A F T = 125 C - 0.49 0.58 j (2) VF Forward voltage drop V Tj = 25 C - 0.80 I = 6 A F T = 125 C - 0.62 0.72 j Notes: (1) Pulse test: t = 5 ms, < 2% p (2) Pulse test: tp = 380 s, < 2% 2/9 DocID029562 Rev 1