X-On Electronics has gained recognition as a prominent supplier of STPS40SM80CG-TR Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. STPS40SM80CG-TR Schottky Diodes & Rectifiers are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

STPS40SM80CG-TR STMicroelectronics

STPS40SM80CG-TR electronic component of STMicroelectronics
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Part No.STPS40SM80CG-TR
Manufacturer: STMicroelectronics
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers Dual Schottky 80V 475mV Vf High Temp
Datasheet: STPS40SM80CG-TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.9578 ea
Line Total: USD 1.96 
Availability - 1081
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1081
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1
Multiples : 1
1 : USD 1.9578

1081
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 4
Multiples : 1
4 : USD 1.9578

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Maximum Operating Temperature
Series
Packaging
Brand
Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Diode Capacitance
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Vr - Reverse Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STPS40SM80CG-TR from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STPS40SM80CG-TR and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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STPS40SM80C Power Schottky rectifier Features A1 K High junction temperature capability A2 Optimized trade-off between leakage current K K and forward voltage drop Low leakage current A2 Avalanche capability specified A2 K Insulated package TO-220FPAB A1 A1 2 insulated voltage: 2000 V 2 D PAK I PAK package capacitance: 45 pF STPS40SM80CG-TR STPS40SM80CR K Description This dual diode Schottky rectifier is suited for high A1 A2 frequency switch mode power supply. K K A2 2 2 A1 Packaged in TO-220AB, I PAK, D PAK and TO- TO-220AB TO-220FPAB 220FPAB, this device is particularly suited for use STPS40SM80CT STPS40SM80CFP in notebook, game station, LCD TV and desktop adapters, providing these applications with a good efficiency at both low and high load. (a) Figure 1. Electrical characteristics Table 1. Device summary I V Symbol ValueForwar I I 2 x 20 A 2 x I O X F(AV) V 80 V RRM IF T (max) 175 C j I O X VRRM V (typ) 520 mV F V V AR R V I R V V V V To F(Io) F F(2xIo)Revers I AR a. V and I must respect the reverse safe ARM ARM operating area defined in Figure 13. V and I are AR AR pulse measurements (t < 1 s). V , I , V and V , p R R RRM F are static characteristics April 2011 Doc ID 018719 Rev 1 1/11 www.st.com 11 Obsolete Product(s) - Obsolete Product(s)Characteristics STPS40SM80C 1 Characteristics Table 2. Absolute ratings (limiting values, per diode, at T = 25 C unless amb otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 80 V RRM I Forward rms current 30 A F(RMS) TO-220AB, T = 145 C Per diode 20 c Average forward current, 2 2 I PAK, D PAK T = 145 C Per device 40 I c A F(AV) = 0.5 TO-220FPAB T = 90 C Per diode 20 c Surge non repetitive I t = 10 ms sinusoidal T = 25 C 200 A FSM p c forward current (1) P Repetitive peak avalanche power T = 25 C, t = 1 s 9500 W ARM j p Maximum repetitive peak (2) V t < 1 s, T < 150 C, I < 28.5 A 100 V ARM p j AR avalanche voltage Maximum single pulse (2) V t < 1 s, T < 150 C, I < 28.5 A 100 V ASM p j AR peak avalanche voltage T Storage temperature range -65 to +175 C stg (3) T Maximum operating junction temperature 175 C j 1. For temperature or pulse time duration deratings, please refer to figure 3 and 4. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025. 2. See Figure 13 dPtot 1 3. < condition to avoid thermal runaway for a diode on its own heatsink Rth(j-a) dTj Table 3. Thermal parameters Symbol Parameter Value Unit per diode 1.60 TO-220AB 2 2 I PAK, D PAK total 0.88 R Junction to case C/W th(j-c) per diode 4.90 TO-220FPAB total 4.00 TO-220AB 0.15 2 2 I PAK, D PAK R Coupling C/W th(c) TO-220FPAB 3.10 When the two diodes 1 and 2 are used simultaneously: T (diode 1) = P(diode 1) x R (Per diode) + P(diode 2) x R j th(j-c) th(c) 2/11 Doc ID 018719 Rev 1 Obsolete Product(s) - Obsolete Product(s)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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