STPS41H100CGY-TR STMicroelectronics

STPS41H100C-Y Automotive low drop power Schottky rectifier Datasheet production data Description Dual center tap Schottky rectifier designed for . high frequency miniature switched mode power supplies such as adaptors and on board DC/DC converters for automotive applications . Table 1. Device summary Symbol Value I 2 x 20 A F(AV) V 100 V RRM 3 2 % 7 T 175 C j(max) V 0.62 V F (Typ) Features Negligible switching losses High junction temperature capability Good trade off between leakage current and forward voltage drop Low leakage current Avalanche rated AEC-Q101 qualified PPAP capable ECOPACK 2 compliant component on TO-220AB January 2015 DocID018564 Rev 2 1/9 This is information on a product in full production. www.st.comCharacteristics STPS41H100C-Y 1 Characteristics Table 2. Absolute ratings (limiting values per diode at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage, T = -40 C 100 V RRM j I Forward rms current 30 A F(RMS) Per diode 20 I Average forward current, = 0.5, T = 150 C A F(AV) c Per device 40 I Surge non repetitive forward current t = 10 ms sinusoidal 220 A FSM p (1) P Repetitive peak avalanche power t = 10 s, T = 125 C 1300 W ARM p j T Storage temperature range -65 to +175 C stg (2) T Operating junction temperature -40 to +175 C j 1. For pulse time duration derating, please refer to Figure 3. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the STMicroelectronics Application notes AN1768, Admissible avalanche power of Schottky diodes and AN2025, Converter improvement using Schottky rectifier avalanche specification. 1 dPtot < 2. condition to avoid thermal runaway for a diode on its own heatsink Rth(j-a) dTj Table 3. Thermal parameters Symbol Parameter Value Unit Per diode 1.5 R Junction to case th(j-c) Per device 0.8 C/W R Coupling 0.1 th(c) When the diodes 1 and 2 are used simultaneously: Tj(diode 1) = P(diode1) x R (Per diode) + P(diode 2) x R th(j-c) th(c) Table 4. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ Max. Unit T = 25 C -- 10 A j (1) I Reverse leakage current V = V R R RRM T = 125 C - 3 10 mA j T = 25 C - - 0.80 j I = 20 A F T = 125 C - 0.62 0.67 j (2) V Forward voltage drop V F T = 25 C - - 0.90 j I = 40 A F T = 125 C - 0.70 0.76 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 0.58 x I + 0.0045 x I F(AV) F (RMS) 2/9 DocID018564 Rev 2